Heater Coating Structure for Thermal Stress and Impurity Barrier

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in maintaining the reproducibility and reliability of deposition layers due to thermal stress and impurity permeation in heaters, which can lead to cracks and reduced performance.

Innovation Solution

The use of a coating layer comprising a ternary material of transition metal-aluminum-nitrogen (MxAl1-xNy) with specific aluminum and nitrogen content ratios is applied to the heater, including multiple layers with varying aluminum content and a passivation layer with higher nitrogen content to reduce thermal stress and impurity permeation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a heater is used in the deposition process, then the deposition layer can be formed on the substrate, but thermal stress and impurity permeation occur in the heater leading to cracks and reduced reliability

Engineering Contradiction:

Improvereliability of deposition processVSAvoidthermal stress and impurity permeation

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A coating layer comprising a ternary material of transition metal-aluminum-nitrogen (MxAl1-xNy) is applied to the heater surface as an intermediary barrier. This coating layer prevents direct contact between the heater and the deposition environment, thereby blocking impurity permeation and reducing thermal stress concentration that would otherwise cause cracks and reliability issues.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The heater is equipped with a composite coating layer made from a ternary material system (transition metal-Al-N) rather than a single material. This composite structure combines the benefits of different elements: transition metal provides thermal stability, aluminum enhances strength and oxidation resistance, and nitrogen reduces thermal stress and prevents impurity diffusion, collectively solving the reliability problem.

Inventive Principle:

Principle #40Composite materials

2Productivity

If the heater is exposed to high temperature and deposition environment, then the deposition process can proceed, but cracks occur in the heater reducing manufacturing precision

Engineering Contradiction:

Improvedeposition process efficiencyVSAvoidprecision of deposition layer

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The coating layer acts as a protective intermediary between the heater and the high-temperature deposition environment. It allows the deposition process to proceed at high temperatures while preventing thermal stress concentration and impurity ingress that would cause heater cracks and compromise deposition layer precision.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The coating layer modifies the thermal and chemical parameters at the heater surface. It changes the thermal stress distribution pattern and creates a barrier against impurity diffusion, enabling the heater to maintain structural integrity and manufacturing precision under high-temperature deposition conditions.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively reduces thermal stress and prevents impurity permeation, enhancing the reliability and reproducibility of deposition processes in semiconductor manufacturing.

Implementation Method 1

a coating layer on the heater, the coating layer including a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by the following Chemical Formula: MxAl1-xNy wherein x and y satisfy the following relations: 0<x≤1 and 0.8≤y≤1.2

Methodology Applied

Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

Methodology Applied

Scientific EffectPermeation barrier: Permeation

Data Source

PatentUS12469721B2Apparatus for manufacturing a semiconductor device and method of manufacturing the apparatus

Publication Date: 2025.11.11 SAMSUNG ELECTRONICS CO LTD

AI summary

An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by the following Chemical Formula:MxAl1-xNy, [Chemical Formula]wherein x and y satisfy the following relations: 0<x<1 and y≥1.