Heater Terminal Contacts for Annealing Radiation-Induced Oxide Traps
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Solution Overview
Problem
Microelectronic devices suffer from oxide interface degradation due to radiation-rich environments and aggressive biasing, leading to electrical shifts, single-event upsets, and total ionizing dose-induced damage, resulting in device degradation and failure.
Innovation Solution
A heterojunction bipolar transistor with heater terminal contacts electrically coupled to the sub-collector region, which generate heat to thermally anneal oxide interface traps, repairing damage caused by single-event upsets and total ionizing dose events.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If microelectronic devices operate in radiation-rich environments, then they perform their intended function, but oxide interface degradation occurs leading to device failure
Solution Approach 1:
The patent applies preliminary action by implementing heater terminal contacts that can thermally anneal oxide interface traps before they cause device failure. The heater contacts are pre-positioned and can be activated to repair radiation-induced damage, preventing the degradation from progressing to device failure rather than waiting for damage to accumulate
2Reliability
If heater terminal contacts are added to thermally anneal oxide interface traps, then device performance is maintained, but device complexity increases
Solution Approach 1:
The heater terminal contacts serve multiple functions: they provide thermal annealing to repair oxide interface traps, maintain device performance under radiation, and can potentially serve as additional electrical contacts. This multi-functionality justifies the added structural complexity by delivering multiple benefits from a single added component
Solution Approach 2:
The patent changes the physical state parameter by introducing thermal energy through the heater contacts to alter the oxide interface trap states. By changing the temperature parameter locally at the oxide interface, the heater contacts enable dynamic repair of radiation-induced damage, transforming the device from a passive structure to an actively maintainable system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively anneals radiation-induced defects, maintaining device performance and preventing long-term degradation by using heater terminal contacts to generate heat and repair oxide interface traps, thereby extending the lifespan of microelectronic devices.
Implementation Method 1
heater terminal contacts electrically coupled to the sub-collector region... generate heat to thermally anneal oxide interface traps
Implementation Method 2
thermally anneal oxide interface traps, repairing damage caused by single-event upsets and total ionizing dose events
Data Source
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AI summary
The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.