Heater Power Prediction for Furnace Temperature Correction
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Solution Overview
Problem
In semiconductor manufacturing, the accumulation of deposits on the inner walls of the manufacturing apparatus leads to a decrease in furnace temperature, resulting in an inability to achieve the desired film thickness during heat treatment processes.
Innovation Solution
A temperature correction information calculating device is employed to predict and adjust the heater power based on accumulated film thickness, using a temperature correction table and models to ensure accurate temperature control and film thickness achievement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor manufacturing apparatus repeatedly performs heat treatment to deposit film on semiconductor wafers, then the film deposition process can be completed, but the accumulated film thickness of deposits on the inner wall surface increases, causing the furnace temperature to decrease even when controlled at a preset temperature
Solution Approach 1:
The system performs preliminary action by predicting the heater power required for future deposition processes based on the current accumulated film thickness and log information from previous processes. This prediction allows the preset temperature to be corrected in advance before the temperature actually drops, preventing the temperature deviation caused by accumulated deposits rather than merely reacting after the temperature falls.
Solution Approach 2:
The system implements feedback by using log information from previously performed deposition processes to calculate and update temperature correction values. The preset temperature is continuously adjusted based on this feedback loop, which incorporates historical heater power data and accumulated film thickness information, enabling the system to adapt to the changing thermal conditions caused by deposit accumulation on the inner wall surface.
2Productivity
If the accumulated film thickness of deposits increases on the inner wall surface, then more deposition cycles can be completed, but the furnace temperature decreases making it impossible to deposit film with desired thickness
Solution Approach 1:
The system performs preliminary correction of the preset temperature by predicting the heater power needed for the next deposition process based on current accumulated film thickness. This advance correction ensures that the temperature will be appropriate when the next deposition begins, maintaining film thickness precision even as deposits accumulate and allow more deposition cycles to be completed.
Solution Approach 2:
The system uses feedback from log information containing heater power data from previous deposition processes to continuously update temperature correction values. This feedback mechanism allows the system to maintain manufacturing precision by adapting the preset temperature to the current state of deposit accumulation, enabling consistent film thickness control across multiple deposition cycles.
3Temperature
If the preset temperature is corrected based on accumulated film thickness, then the furnace temperature can be maintained, but additional calculation and control complexity is introduced
Solution Approach 1:
The system applies self-service by automatically calculating temperature correction values using log information from its own previous operations and the currently measured accumulated film thickness. The semiconductor manufacturing apparatus performs its own temperature correction without requiring external intervention or complex external control systems, reducing overall device complexity while maintaining accurate temperature control.
Solution Approach 2:
The system replaces complex mechanical temperature adjustment mechanisms with a computational approach. Instead of physically modifying the heating system, the patent uses information processing to calculate correction values based on log data and film thickness measurements, substituting mechanical complexity with simpler computational logic that achieves the same temperature control objective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device accurately corrects preset temperatures by predicting heater power variations, ensuring consistent film thickness across multiple deposition processes, thereby improving the efficiency and accuracy of semiconductor manufacturing.
Implementation Method 1
control a temperature by using a heater such that the temperature approaches the corrected preset temperature
Implementation Method 2
perform a deposition process on a semiconductor wafer
Data Source
AI summary
A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.