Heating Module for Semiconductor Exhaust Pipe Temperature Control

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Solution Overview

Problem

In semiconductor processing tools, particularly in CVD tools, there is a challenge in preventing the build-up of contaminants within the exhaust pipes due to hydrolysis reactions of gases like TEOS, which can lead to clogging and reduce production throughput, as existing systems struggle to maintain optimal temperature conditions to prevent unwanted reactions.

Innovation Solution

A heating module is integrated into the exhaust system that selectively flows a heated inert gas, such as nitrogen, into the exhaust pipes to maintain a temperature range of 105° C to 110° C, thereby inhibiting contaminant deposition and reducing the risk of clogging, while coordinating with the semiconductor fabrication process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If the exhaust pipe temperature is reduced to improve energy efficiency, then energy consumption decreases, but contaminant build-up increases due to hydrolysis reactions

Engineering Contradiction:
Improveenergy consumptionVSAvoidcontaminant build-up
Core Design Contradiction:
Use of energy by moving objectVSObject-generated harmful factors

Solution Approach 1:

The patent changes the temperature parameter of the exhaust gas by introducing a heating element that maintains the exhaust pipe temperature within a specific range (105°C to 110°C). This prevents hydrolysis reactions that cause contaminant build-up while avoiding excessive energy consumption through controlled heating only when necessary during semiconductor fabrication processes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces an intermediary heating element and temperature control system between the exhaust gas flow and the pipe walls. This intermediary mechanism actively manages the thermal environment to prevent contaminant deposition without requiring the entire exhaust system to be maintained at high temperatures continuously.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-generated harmful factors

If the exhaust pipe temperature is increased to prevent contaminant deposition, then contaminant build-up decreases, but energy consumption increases

Engineering Contradiction:
Improvecontaminant build-upVSAvoidenergy consumption
Core Design Contradiction:
Object-generated harmful factorsVSUse of energy by moving object

Solution Approach 1:

The heating element is operated periodically rather than continuously, activating during semiconductor fabrication processes when exhaust gas flow occurs and deactivating during idle periods. This periodic operation maintains temperature control to prevent contaminant build-up while minimizing overall energy consumption.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The system dynamically adjusts the temperature parameter based on process conditions, maintaining the exhaust pipe temperature within an optimal range (105°C to 110°C) only when needed during fabrication processes, rather than maintaining high temperatures continuously, thus reducing energy consumption while preventing contaminant deposition.

Inventive Principle:
Principle #35Parameter changes

3Object-generated harmful factors

If continuous heating is applied to prevent contaminant deposition, then contaminant build-up is minimized, but production throughput decreases due to increased downtime

Engineering Contradiction:
Improvecontaminant build-upVSAvoidproduction throughput
Core Design Contradiction:
Object-generated harmful factorsVSProductivity

Solution Approach 1:

The heating system operates periodically during semiconductor fabrication processes rather than continuously, activating when exhaust gas is being pumped and deactivating during idle periods or between batches. This reduces unnecessary energy consumption and extends the intervals between cleaning maintenance, thereby improving production throughput.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The heating element ensures continuous temperature maintenance during active fabrication processes, preventing contaminant build-up in real-time rather than requiring periodic shutdowns for cleaning. This continuous protective action minimizes maintenance downtime and maintains high production throughput.

Inventive Principle:
Principle #20Continuity of useful action

4Object-generated harmful factors

If temperature control is implemented to prevent hydrolysis reactions, then contaminant deposition is reduced, but device complexity increases

Engineering Contradiction:
Improvecontaminant depositionVSAvoiddevice complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent implements temperature control by introducing a heating element with a simple temperature sensor and control circuit that maintains the exhaust pipe temperature within a specific range (105°C to 110°C). This straightforward parameter control prevents hydrolysis reactions and contaminant deposition without requiring complex multi-component systems.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The heating module effectively prevents contaminant build-up in the exhaust pipes, reduces downtime for cleaning, and increases production throughput by maintaining optimal temperature conditions within the exhaust system.

Implementation Method 1

a heating element contained within the supply line, the heating element being selectively energized to heat the nitrogen gas as it flows through the supply line over the heating element

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS20240360551A1Heating module and program control method for pumping line of semiconductor processing tool
Publication Date: 2024.10.31 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240360551A1 patent drawing
  • US20240360551A1 patent drawing
  • US20240360551A1 patent drawing

AI summary

A semiconductor processing tool includes: a process chamber into which a semiconductor wafer is loaded; a support for securing the wafer loaded into the chamber tool; an inlet which introduces a first gas into the chamber for processing the wafer; and an exhaust system that exhausts gas from the chamber. The exhaust system includes: a first line coupled to the chamber to exhaust gas from the chamber; and a pump to draw gas through the first line from the chamber. The tool further includes a heating module having: a second line coupled to the first and a supply of a second gas, the second gas being flowed through the second line from the supply into the first line; and a heating element contained in the second line, the heating element heating the second gas in the second line before the second gas is flowed into the first line.