Hemispheric Post Electrodes for WLCSP Stress Reduction

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Solution Overview

Problem

In semiconductor devices using WLCSP technology, the corner portions of post electrodes can cause intensive stress on solder balls, leading to crack formation during mounting on a print circuit board.

Innovation Solution

The post electrodes are designed with a hemispheric top surface, eliminating corner portions and forming a hemispheric interface with external connecting terminals, which reduces stress and enhances lateral stress resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the post electrode is formed with a flat top surface by grinding, then the manufacturing process is simple and efficient, but corner portions are formed that cause intensive stress on solder balls leading to crack formation

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidcrack resistance of solder ball
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The top surface of the post electrode is formed with a curved shape (convex in plan view) instead of a flat surface, eliminating corner portions that concentrate stress. This curvature distributes the stress from the solder ball more evenly across the post electrode surface, preventing crack formation while maintaining manufacturing feasibility through controlled formation during plating or molding processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Device complexity

If the post electrode has a flat top surface, then the interface with external connecting terminals is simple, but the lateral stress resistance is insufficient

Engineering Contradiction:
Improveinterface structure simplicityVSAvoidlateral stress resistance
Core Design Contradiction:
Device complexityVSStrength

Solution Approach 1:

The curved top surface of the post electrode creates a dome-like interface with the external connecting terminal (solder ball). This curved geometry provides better mechanical interlocking and distributes lateral stresses more effectively compared to a flat interface, enhancing the strength of the connection without significantly increasing structural complexity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Data Source

PatentUS8072068B2Semiconductor device and a method for manufacturing the same
Publication Date: 2011.12.06 ROHM CO LTD
  • US8072068B2 patent drawing
  • US8072068B2 patent drawing
  • US8072068B2 patent drawing

AI summary

A semiconductor device according to the present invention includes: a semiconductor chip; a sealing resin layer formed on the semiconductor chip; and a post electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a hemispheric top surface.