HEMT Buffer Layer Amorphous Regions for Leakage Blocking
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Solution Overview
Problem
Conventional high electron mobility transistors (HEMTs) face issues with larger gate leakage currents and lower breakdown voltages, necessitating improvements in their design and manufacturing processes.
Innovation Solution
The introduction of amorphous regions in the buffer layer below the channel layer in HEMT devices, which act as blocking regions to reduce leakage current by increasing resistance and aligning with the source and drain, thereby mitigating leakage current paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional HEMT structures are used, then high electron mobility is achieved, but gate leakage current increases and breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating amorphous regions specifically in the buffer layer beneath the source and drain electrodes, while maintaining the crystalline structure elsewhere in the device. This localized modification blocks leakage current paths in critical areas without affecting the overall high electron mobility characteristics of the HEMT channel.
Solution Approach 2:
The patent changes the physical state parameter of the buffer layer from crystalline to amorphous in specific regions through ion implantation and thermal processing. This parameter change fundamentally alters the electrical properties of the buffer layer, creating high-resistance regions that block leakage current while preserving the functional crystalline regions.
2Object-generated harmful factors
If amorphous regions are formed in the buffer layer, then leakage current is reduced, but device structure complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the amorphous regions in the buffer layer during the device fabrication process, specifically after forming the channel layer and before completing the source and drain electrode structures. This preliminary modification of the buffer layer simplifies subsequent processing steps and integrates the leakage current blocking function into the existing manufacturing flow.
Solution Approach 2:
The amorphous regions act as intermediary elements between the crystalline buffer layer and the source-drain structures. These intermediate amorphous zones provide a transition region that blocks leakage current paths without requiring fundamental redesign of the overall device architecture, thus managing complexity through the introduction of a functional intermediate layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of amorphous regions effectively blocks leakage current paths, enhancing the performance of HEMT devices by reducing leakage currents and potentially improving breakdown voltages.
Implementation Method 1
formed through a treatment process that converts crystalline regions to amorphous regions using ion implantation
Implementation Method 2
formed through a treatment process that converts crystalline regions to amorphous regions using ion implantation and thermal recrystallization
Data Source
AI summary
A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.