HEMT Wafer Clamping Ring Geometry for Peel-Free CVD
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Solution Overview
Problem
Existing deposition technologies for high-electron-mobility transistors (HEMTs) face challenges in achieving high yield rates suitable for mass production, particularly in forming conductive layers without peeling during the deposition process.
Innovation Solution
A nitride-based wafer chemical vapor deposition (CVD) device and method that utilizes a clamping ring with a polished surface and a tilted surface, maintaining a specific distance from the carrier surface, and a controlled gas flow to deposit conductive layers like tungsten without peeling, using a grinding process to optimize the deposition environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition technology is used for HEMT devices, then the deposition process can be completed, but the conductive layer peels during deposition and the yield rate is low
Solution Approach 1:
The patent changes the geometric parameters of the clamping ring, specifically setting the distance between the polished surface and carrier surface to 1.1-1.2mm, and introduces controlled gas flow parameters to optimize the deposition environment. These parameter changes prevent conductive layer peeling while maintaining high yield rates for mass production
Solution Approach 2:
The patent introduces gas flow as an intermediary medium between the clamping ring and the wafer surface. The gas flow fills the gap (1.1-1.2mm) and acts as a mediator to control the deposition environment, preventing conductive layer peeling during the deposition process
2Area of stationary object
If the clamping ring is positioned close to the wafer, then the deposition coverage is improved, but the conductive layer peels during deposition
Solution Approach 1:
The patent optimizes the distance parameter between the clamping ring polished surface and the carrier surface to a specific range (1.1-1.2mm). This parameter change achieves the right balance: close enough to provide good deposition coverage but far enough to prevent conductive layer peeling when gas flow is introduced
Solution Approach 2:
The patent uses gas flow (pneumatics) to fill the gap between the clamping ring and wafer. The gas flow pressure and distribution are controlled to ensure proper deposition coverage while preventing conductive layer peeling through the pneumatic cushioning effect
3Manufacturing precision
If the clamping ring thickness is reduced to optimize deposition, then the deposition environment is improved, but the structural strength may be compromised
Solution Approach 1:
The patent reduces the clamping ring thickness parameter to optimize the deposition environment, creating a controlled gap (1.1-1.2mm) for gas flow. This parameter change improves deposition quality while the ring structure maintains sufficient strength through its geometric design and material properties
4Reliability
If the distance between clamping ring and carrier surface is increased, then conductive layer peeling is prevented, but the deposition coverage and efficiency decrease
Solution Approach 1:
The patent sets the distance between the clamping ring polished surface and carrier surface to a specific optimal range (1.1-1.2mm). This parameter change prevents conductive layer peeling while maintaining sufficient deposition coverage and efficiency through the introduction of controlled gas flow in the gap
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-quality conductive layer deposition on HEMT devices with minimal peeling, ensuring high coverage and reliability, thereby improving the yield and suitability for mass production.
Implementation Method 1
nitride-based wafer chemical vapor deposition (CVD) device and deposition method of the same
Data Source
AI summary
A nitride-based wafer CVD device comprises a heat carrier, a nitride-based wafer, and a clamping ring. The heat carrier comprises a carrier surface. The nitride-based wafer is disposed on the carrier surface. The clamping ring is disposed above the carrier surface and the nitride-based wafer. The clamping ring comprises a tilted surface, and a polished surface, and the polished surface is opposite to the tilted surface. The nitride-based wafer has a plurality of HEMT devices. The polished surface and the carrier surface are parallel. A distance between the polished surface and the carrier surface in a first direction is in a range from 1.1 mm to 1.2 mm, and the first direction is parallel to a normal of the carrier surface.