HEMT Gate-Coupled Conductive Layer for Higher Breakdown Voltage
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Solution Overview
Problem
Current semiconductor devices, such as high electron mobility transistors (HEMTs), face limitations in achieving high breakdown voltage without the use of a gate field plate, and there is a need to further enhance breakdown voltage while maintaining device performance.
Innovation Solution
The implementation of a HEMT device structure that includes a conductive layer electrically coupled to the gate, with a high-resistance structure isolating it from the two-dimensional electron gas, effectively reducing the electric field strength and increasing breakdown voltage, either without or with the use of a gate field plate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate field plate is used to increase breakdown voltage, then the breakdown voltage of the device is improved, but the device complexity increases due to additional structure
Solution Approach 1:
The patent introduces an intermediate conductive layer between the gate and the two-dimensional electron gas, which acts as a mediator to reduce the electric field strength. This conductive layer is electrically connected to the gate through an electrocoupling structure but isolated from the two-dimensional electron gas by a high-resistance structure, thereby indirectly protecting against breakdown without requiring a traditional gate field plate extension.
Solution Approach 2:
The patent segments the electric field management function into multiple components: the conductive layer for field reduction, the electrocoupling structure for electrical connection, and the high-resistance structure for isolation. This segmentation allows each component to perform its specific function efficiently while maintaining overall device performance.
2Reliability
If the gate electric field strength is reduced to increase breakdown voltage, then the breakdown voltage is improved, but the switching efficiency may be affected
Solution Approach 1:
The patent applies local quality by creating a non-uniform electric field distribution through the conductive layer. The high-resistance structure is strategically positioned to provide strong isolation where needed (between the conductive layer and two-dimensional electron gas) while allowing efficient field modulation in other regions (between the gate and conductive layer), thus maintaining switching efficiency while improving breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the breakdown voltage of the semiconductor device, allowing it to operate effectively at high voltages, high powers, and high frequencies while maintaining efficient switching characteristics.
Implementation Method 1
the electric field strength of the gate of the semiconductor device at a high voltage can be effectively reduced by the conductive layer to which the gate is connected
Implementation Method 2
a high-resistance structure, at least partially disposed between the conductive layer and the two-dimensional electron gas, and between the electrocoupling structure and the two-dimensional electron gas
Data Source
AI summary
Provided is a HEMT device, including: a substrate, an epitaxial layer, a source, a drain, a gate, a conductive layer, an electrocoupling structure, and a high-resistance structure. The epitaxial layer is disposed on the substrate, and includes: a first semiconductor stack layer and a second semiconductor layer disposed on the first semiconductor stack layer; wherein a two-dimensional electron gas is formed at an interface between the first semiconductor stack layer and the second semiconductor layer. The conductive layer is disposed within the epitaxial layer and between the substrate and the two-dimensional electron gas. An end of the electrocoupling structure is electrically connected to the gate, and the other end extends into the epitaxial layer and is electrically connected to the conductive layer. The high-resistance structure is at least partially disposed between the conductive layer and the two-dimensional electron gas, and between the electrocoupling structure and the two-dimensional electron gas.