Integrated HEMT Diode Structure for Lower Reverse Conduction Loss
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Solution Overview
Problem
Existing semiconductor devices, particularly high electron mobility transistors (HEMTs) based on gallium nitride, face issues with insufficient conduction efficiency and high power loss, which are not fully addressed by current technologies.
Innovation Solution
Incorporating a diode structure disposed in the normal direction of the substrate within the HEMT, which reduces power loss during reverse conduction and allows for a more compact device design by minimizing the overall area, thereby increasing device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a diode structure is added to reduce reverse conduction power loss, then power loss is reduced, but device complexity increases
Solution Approach 1:
The diode structure is merged with the HEMT by sharing the substrate and integrating the diode anode with the HEMT source electrode, creating a combined device that reduces reverse conduction power loss while minimizing the increase in device complexity through shared structural elements
Solution Approach 2:
The integrated structure serves multiple functions: the HEMT provides high electron mobility transistor operation while the integrated diode structure provides reverse conduction protection, allowing a single device to perform both functions rather than requiring separate components
2Quantity of substance
If the device area is reduced to increase device density, then device density increases, but manufacturing precision requirements increase
Solution Approach 1:
The diode structure is arranged in the normal direction of the substrate rather than laterally, utilizing the vertical dimension to integrate the diode function. This vertical integration minimizes the lateral footprint and overall device area while maintaining manufacturability through standard vertical processing techniques
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate, a channel layer, a barrier layer, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a diode structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate electrode is disposed on the barrier layer. The dielectric layer is disposed on the gate electrode. The source electrode and the drain electrode are disposed on opposite sides of the gate electrode and in contact with the channel layer, respectively. The diode structure is disposed on the dielectric layer and is electrically connected to the source electrode.