Group III-V HEMT Electrode Layout for Easier Substrate Integration
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Solution Overview
Problem
The manufacturing of high-electron-mobility transistors (HEMTs) on silicon substrates is challenging due to material limitations, leading to increased costs and complexity, as HEMTs are typically made separately from silicon-based devices and then wire-bonded, which complicates the integration process.
Innovation Solution
A semiconductor device with a group III-V semiconductor material structure, including a channel layer, barrier layer, sources/drains, gate insulating layer, and electrodes, is designed for fluidic self-assembly transfer, allowing for a diagonally symmetrical electrode arrangement suitable for integration on various substrates, thereby simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If HEMTs are manufactured separately from silicon-based devices and then wire-bonded, then the material limitations of Si are overcome, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent combines the HEMT structure with silicon-based devices into a single integrated device, eliminating the need for separate manufacturing and wire bonding. The group III-V semiconductor layer is directly integrated with the silicon substrate, creating a unified structure that maintains high electron mobility while simplifying the manufacturing process.
Solution Approach 2:
The patent creates a universal device structure that can function as both a HEMT (utilizing group III-V semiconductor for high electron mobility) and a silicon-based device (utilizing silicon substrate). This multi-functional design allows the single device to replace what previously required two separate devices and their interconnection.
2Reliability
If HEMTs are manufactured separately from silicon-based devices, then material limitations are addressed, but manufacturing cost increases
Solution Approach 1:
By merging the HEMT and silicon-based device into a single integrated structure, the patent eliminates the need for separate manufacturing processes and post-fabrication assembly (wire bonding). This consolidation reduces manufacturing steps, material waste, and labor costs while maintaining the high electron mobility benefits of group III-V semiconductors.
3Reliability
If wire bonding is used to connect HEMT and silicon-based devices, then electrical connection is achieved, but process complexity increases
Solution Approach 1:
The patent merges the electrical connection function into the integrated structure itself, where the group III-V semiconductor layer and silicon substrate form direct electrical contacts through the unified device architecture. This eliminates the need for separate wire bonding processes, reducing integration complexity while maintaining reliable electrical connections.
Data Source
AI summary
A semiconductor device includes a channel layer including a first group III-V semiconductor material; a barrier layer provided on an upper surface of the channel layer, the barrier layer including a second group III-V semiconductor material that is different than the first group III-V semiconductor material; a plurality of sources/drains spaced apart from each other on an upper surface of the barrier layer; a gate insulating layer covering the upper surface of the barrier layer and upper surfaces of the plurality of sources/drains; a gate provided on an upper surface of the gate insulating layer, the gate not overlapping the plurality of sources/drains; a plurality of source/drain electrodes electrically connected to corresponding sources/drains among the plurality of sources/drains; and a gate electrode electrically connected to the gate, wherein the plurality of source/drain electrodes has a diagonally symmetrical arrangement.