HEMT Field Plate Temperature Sensing With Fewer Sensor Terminals
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing HEMT devices face challenges in accurately measuring channel temperature due to nonlinear temperature dependence, complex manufacturing processes, sensitivity to trapping and bias effects, and disruption of structural periodicity, especially when integrated temperature sensors are required for high-temperature operations.
Innovation Solution
Incorporating a first field plate region in the HEMT device as a resistance temperature detector (RTD) that is integrated close to the transistor channel, utilizing a conductive material like platinum, nickel, or copper, which varies resistance with temperature, allowing for temperature measurement through a 2-wire or 4-wire measurement method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a separate temperature sensor is integrated close to the transistor channel, then temperature measurement capability is improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The field plate region is designed to serve dual functions: its primary function of modifying the electric field during HEMT operation and a secondary function as a temperature sensor. By making the field plate region temperature-sensitive through material selection (e.g., metal layers with known temperature coefficients), the same structure provides both electrical field control and temperature measurement capabilities, eliminating the need for separate sensor structures and reducing overall device complexity
Solution Approach 2:
The temperature sensing function is merged with the field plate region by utilizing the inherent temperature dependence of the field plate's electrical characteristics. The field plate region is configured such that its resistance or impedance changes predictably with temperature, allowing temperature measurement to be integrated into the existing HEMT structure without adding separate sensing elements, thereby simplifying the manufacturing process
2Measurement precision
If complex manufacturing processes are used for integrated temperature sensors, then temperature measurement accuracy is improved, but ease of manufacture deteriorates
Solution Approach 1:
The field plate region serves itself by providing temperature sensing functionality through its inherent material properties rather than requiring additional dedicated sensor structures. The metal layers already present in the HEMT device (such as aluminum, copper, or other conductive materials) are utilized as the temperature-sensitive element, eliminating the need for separate sensor fabrication processes and simplifying manufacturing while maintaining measurement accuracy
Solution Approach 2:
The solution exploits changes in electrical parameters (resistance, impedance) of the field plate region with temperature. By designing the field plate with specific material compositions and geometries, the temperature coefficient of resistance is optimized to provide accurate temperature measurement. This approach uses standard semiconductor manufacturing processes to create structures with controlled electrical parameters that naturally respond to temperature changes, avoiding complex specialized fabrication steps
3Measurement precision
If dedicated temperature sensor structures are added, then temperature sensing capability is improved, but structural periodicity and device performance are disrupted
Solution Approach 1:
The field plate region is designed to perform multiple functions simultaneously: maintaining the structural periodicity required for optimal HEMT performance and providing temperature sensing capability. By integrating the temperature sensing function into the existing field plate structure rather than adding separate elements, the solution preserves the structural periodicity while enabling temperature measurement, thus avoiding disruption to device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated field plate region effectively measures channel temperature with high sensitivity and stability, enhancing device performance and reliability by minimizing interference with transistor operation and maintaining structural integrity.
Implementation Method 1
the first field plate (84) having a temperature-dependent electrical resistivity
Data Source
AI summary
A semiconductor device includes a semiconductor body; a gate; a field plate, spaced from the gate, the field plate having a strip-like shape with main extensions along a first direction, the strip-like shape having a first and a second end opposite to one; a first conductive pad in electrical contact with the field plate at the first end through a first connecting region; a second conductive pad in electrical contact with the field plate at the second end through a second connecting region; and a third conductive pad in electrical contact with the field plate at the second end through a third connecting region. The conductive pads allow the use of the field plate as a temperature sensor.