HEMT Insulator Structure for Gate Edge Breakdown Relief
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Solution Overview
Problem
High-electron-mobility transistors (HEMTs) using III-V compound semiconductors face premature gate dielectric breakdown under high drain bias in power switching applications due to the susceptibility of the gate dielectric layer.
Innovation Solution
Incorporating an insulator region that extends through the interface laterally between the gate electrode and the source/drain regions, formed by ion implantation or plasma processes, to displace the two-dimensional electron gas and reduce the high electric field at the gate edge, thereby enhancing the reliability of the gate dielectric layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a heterojunction between III-V compound semiconductor materials is used to form a two-dimensional electron gas channel, then electron mobility and conduction are improved, but the gate dielectric layer becomes susceptible to premature breakdown under high drain bias
Solution Approach 1:
An insulator region is introduced as an intermediary element between the gate electrode and the source/drain region. This insulator region extends through the interface between the first and second semiconductor layers, laterally positioned between the gate electrode and source/drain region, serving as a mediator to reduce the electric field at the gate edge and prevent dielectric breakdown while preserving the high electron mobility channel
Solution Approach 2:
The insulator region is locally positioned only where needed - laterally between the gate electrode and source/drain region and extending through the interface - rather than uniformly throughout the device. This localized modification provides field reduction precisely where the gate dielectric is most vulnerable without affecting the overall channel properties or electron mobility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insulator regions effectively reduce the susceptibility of the gate dielectric layer to breakdown, improving the reliability and maintaining low ON-resistance in high-electron-mobility transistors without degrading their performance.
Implementation Method 1
Incorporating an insulator region that extends through the interface laterally between the gate electrode and the source/drain regions, formed by ion implantation or plasma processes
Data Source
AI summary
Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electrode, and a source/drain region. An insulator region is provided in the first semiconductor layer and the second semiconductor layer. The insulator region extends through the interface at a location laterally between the gate electrode and the source/drain region.