Electric Field Modulation Structure for HEMT Gate Reliability
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Solution Overview
Problem
Current high electron mobility transistors (HEMTs) are susceptible to high electric fields, which affects the reliability and performance of the devices, particularly in high-speed and high-temperature operating environments.
Innovation Solution
The semiconductor device incorporates an electric field modulation structure with a conductive layer positioned between the gate and drain structures, electrically connected to both, which modifies the electric field distribution and guides carriers outside the device when off, thereby enhancing performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional gate structure is used in HEMT devices, then the device can operate at high speeds, but the gate structure is easily affected by high electric fields, reducing reliability
Solution Approach 1:
An electric field modulation structure is introduced as an intermediary element between the gate and drain structures. This modulation structure includes a conductive layer positioned between the gate structure and the drain structure, electrically connected to both, which modifies the electric field distribution and reduces the direct impact of high electric fields on the gate structure, thereby improving reliability while maintaining high-speed operation
2Device complexity
If the gate structure is positioned close to the drain structure for compact design, then device integration is improved, but the gate structure becomes more susceptible to high electric fields
Solution Approach 1:
The electric field modulation structure serves as a mediator between the gate and drain structures, allowing them to remain in close proximity for compact integration while the modulation structure itself manages the electric field interactions, preventing harmful field effects on the gate despite the reduced spacing
3Device complexity
If no electric field modulation structure is used, then the device structure remains simple, but carriers are trapped and performance deteriorates under high electric fields
Solution Approach 1:
The electric field modulation structure acts as an intermediary that guides carriers from the drain structure away from the gate structure through a controlled path. The conductive layer in the modulation structure provides a designated route for carrier flow, preventing random carrier trapping near the gate and ensuring reliable carrier transport even under high electric field conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the risk of the gate structure being affected by high electric fields, improves the semiconductor device's performance, and is particularly beneficial for high electron mobility transistors (HEMTs) by optimizing electric field distribution and preventing carrier trapping.
Implementation Method 1
The conductive layer is positioned between the gate structure and the drain structure... modifies the electric field distribution... reduces the risk of the gate structure being affected by high electric fields
Implementation Method 2
guides carriers outside the device when off... electric connection structure is electrically connected to the source structure and the drain structure
Data Source
AI summary
A semiconductor device is provided, including a substrate, a seed layer on the substrate, an epitaxial layer on the seed layer, an electrode structure on the epitaxial layer and an electric field modulation structure. The electrode structure includes a gate structure, a source structure and a drain structure, wherein the source structure and the drain structure are positioned on opposite sides of the gate structure. The electric field modulation structure includes an electric connection structure and a conductive layer electrically connected to the electric connection structure. The conductive layer is positioned between the gate structure and the drain structure. The electric connection structure is electrically connected to the source structure and the drain structure.