HEMT High Resistivity Region Ion Implantation
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Solution Overview
Problem
High electron mobility transistors (HEMTs) face challenges in achieving improved withstand voltage characteristics, which is crucial for their efficient use in electronic devices, particularly power devices, as existing manufacturing methods struggle to enhance their voltage withstand capabilities effectively.
Innovation Solution
The implementation of a high resistivity region in the channel layer of HEMTs by ion-implanting impurities such as neon, argon, carbon, iron, and vanadium, creating a region with a resistivity of at least 10^7 Ω·cm, which extends throughout the top portion of the channel layer, particularly between the gate and drain electrodes, and a buffer layer with ion-implanted impurities, to enhance the transistor's voltage handling capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional HEMT structure is used, then the device can operate with high electron mobility, but the withstand voltage characteristics are insufficient for power device applications
Solution Approach 1:
The patent applies local quality by creating a high resistivity region in a specific location within the channel layer (the upper portion of the channel layer) rather than uniformly modifying the entire structure. This localized modification introduces different electrical properties (high resistivity) only where needed to improve breakdown voltage, while preserving the high electron mobility characteristics in other regions of the channel.
Solution Approach 2:
The patent changes the electrical parameter (resistivity) of a specific region within the channel layer by introducing impurities through ion implantation. By controlling the impurity concentration and distribution, the resistivity of the upper channel layer is increased to create a high resistivity region, which directly addresses the withstand voltage issue without fundamentally changing the overall HEMT structure or manufacturing process complexity.
2Reliability
If impurities are ion-implanted to create a high resistivity region, then withstand voltage characteristics improve, but current leakage and dielectric breakdown may occur
Solution Approach 1:
The high resistivity region is strategically positioned in the upper portion of the channel layer to locally suppress harmful effects. By concentrating the impurity doping in this specific region, the patent creates a localized barrier that prevents current leakage and dielectric breakdown without affecting the overall device performance or introducing widespread harmful effects.
Solution Approach 2:
The patent converts the potential harm of impurity introduction (which could cause defects and leakage) into a benefit by carefully controlling the impurity type, concentration, and distribution. The ion-implanted impurities, when properly managed, create a high resistivity region that actually prevents dielectric breakdown and reduces current leakage, turning what could be a harmful modification into a protective feature.
3Reliability
If the high resistivity region extends throughout the top portion of the channel layer, then voltage handling capability increases, but the effective channel region thickness is reduced
Solution Approach 1:
The patent segments the channel layer into distinct regions with different properties: an upper high resistivity region and a lower effective channel region. This segmentation allows the upper portion to handle voltage stress while the lower portion maintains high electron mobility and conducts current efficiently. The clear division between these functional zones resolves the contradiction by assigning different roles to different parts of the channel layer.
Solution Approach 2:
By applying local quality, the patent creates a high resistivity region only in the upper portion of the channel layer while preserving the original channel properties in the lower effective channel region. This spatial differentiation of properties allows the device to simultaneously achieve high voltage handling capability in the upper region and maintain sufficient effective channel thickness in the lower region for good electron transport.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the withstand voltage characteristics of HEMTs by suppressing current leakage and dielectric breakdown, resulting in enhanced performance and reliability for power devices.
Implementation Method 1
a semiconductor layer having a relatively high polarizability may induce a two-dimensional electron gas (2DEG) in another semiconductor layer combined thereto
Implementation Method 2
a high resistivity region on the effective channel region. The high resistivity region is a region in which impurities are ion-implanted
Data Source
AI summary
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.