HEMT Impurity Layer Segmentation for Leakage Control
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Solution Overview
Problem
Current silicon-based power devices, such as MOSFETs and IGBTs, face limitations in efficiency due to physical properties and manufacturing processes, necessitating the development of high electron mobility transistors (HEMTs) using group III-V compound semiconductors to enhance on-current, threshold voltage, and withstand voltage characteristics.
Innovation Solution
The design of HEMTs includes a first semiconductor layer, a second semiconductor layer inducing a two-dimensional electron gas, an impurity containing layer with selectively activated and non-activated regions, and a gate structure to form a depletion region, optimizing the impurity containing layer's hydrogen content, work function, and resistance for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon-based power devices (MOSFETs, IGBTs) are used, then manufacturing process is well-established, but efficiency and performance are limited due to physical properties of silicon
Solution Approach 1:
The patent transitions from silicon-based devices to group III-V compound semiconductor devices, fundamentally changing the material parameter to achieve higher electron mobility, improved on-current, and enhanced threshold voltage characteristics that cannot be achieved with conventional silicon materials
Solution Approach 2:
The invention employs heterojunction structures combining different group III-V compound semiconductors (e.g., GaN, AlGaN, InGaN) to create composite material systems that leverage the advantageous properties of each material to achieve superior device performance
2Reliability
If uniform impurity distribution is used in the impurity containing layer, then manufacturing is simpler, but gate leakage current increases and threshold voltage control is poor
Solution Approach 1:
The impurity containing layer is designed with spatially varying impurity concentrations, including high-concentration regions near the gate for threshold voltage control and low-concentration regions in other areas to minimize gate leakage, giving different parts of the layer different functional properties
Solution Approach 2:
The impurity containing layer is divided into multiple regions with different impurity concentrations and activation states, allowing independent optimization of each region's function for threshold voltage control, gate leakage reduction, and overall device performance
3Reliability
If high impurity concentration is applied throughout the impurity containing layer, then threshold voltage control improves, but gate leakage current increases
Solution Approach 1:
High impurity concentration is localized specifically in regions where threshold voltage control is needed, while other regions maintain low impurity concentrations to prevent gate leakage, achieving both goals simultaneously through spatial differentiation
Solution Approach 2:
The impurity containing layer is segmented into high-concentration and low-concentration regions, with the high-concentration region providing threshold voltage control and the low-concentration region minimizing gate leakage current
4Reliability
If activated impurity regions are formed in the impurity containing layer, then hole generation improves carrier control, but manufacturing process complexity increases
Solution Approach 1:
Impurities are pre-introduced into the impurity containing layer during layer formation, and selective activation is performed in subsequent processing steps, allowing carrier control to be established before final device assembly and testing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The HEMTs exhibit excellent operating characteristics, including low on-resistance, high withstand voltage, and reduced gate leakage current, making them suitable for various electronic devices, particularly power devices.
Implementation Method 1
a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer inducing a two-dimensional electron gas (2DEG) in the first semiconductor layer
Implementation Method 2
the first region includes an impurity region that is activated to generate holes
Implementation Method 3
a depletion region is formed by the activated impurity region in a region of the 2DEG corresponding to the activated impurity region
Data Source
AI summary
Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.