HEMT Pad Insertion Structure for Uniform Voltage
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Solution Overview
Problem
High electron mobility transistors (HEMTs) face limitations in increasing pad areas without reducing channel lengths or increasing device size, and existing manufacturing processes often lead to reduced adhesive strengths between pads and electrodes.
Innovation Solution
The design includes source and drain pads with insertion portions that extend into the electrodes, allowing for wider pad areas without increasing the device size, and a manufacturing process that forms these pads within recessed accommodation portions with insulating layers to maintain adhesive strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the widths of the drain pad and the source pad are increased to achieve desired pad areas, then the pad areas are sufficient for uniform voltage application, but the channel length becomes relatively small or the entire size of the HEMT increases
Solution Approach 1:
The pad structure transitions from a conventional planar configuration to a three-dimensional configuration by forming recesses in the pad layers. This allows the pad area to be effectively increased through vertical depth rather than horizontal width, thereby maintaining sufficient contact area for uniform voltage application without reducing channel length or increasing the overall device footprint.
Solution Approach 2:
The invention embeds recessed regions within the pad structure, creating a nested configuration where the electrode contacts extend into the pad material. This nested arrangement increases the effective pad area and contact area without increasing the external dimensions of the device, resolving the contradiction between pad area and device size.
2Area of stationary object
If the widths of the drain pad and the source pad are increased to achieve desired pad areas, then the pad areas are sufficient for uniform voltage application, but the entire size of the HEMT increases
Solution Approach 1:
The pad structure transitions from a conventional planar configuration to a three-dimensional configuration by forming recesses in the pad layers. This allows the pad area to be effectively increased through vertical depth rather than horizontal width, thereby maintaining sufficient contact area for uniform voltage application without increasing the overall device footprint.
3Ease of manufacture
If a conventional manufacturing process is used for forming pads, then the manufacturing process is simple, but the adhesive strengths between pads and electrodes deteriorate
Solution Approach 1:
The manufacturing process performs preliminary actions by forming recesses in the pad layers before depositing the electrode materials. This preliminary structuring of the pad surface creates mechanical interlocking features that enhance adhesive strength, while the overall fabrication sequence remains compatible with conventional semiconductor manufacturing techniques.
Solution Approach 2:
The invention applies local quality changes by creating recessed regions with different geometries and material compositions in specific areas of the pad structure. These localized modifications enhance adhesive strength at the pad-electrode interface without affecting the overall pad structure or requiring changes to the entire manufacturing process.
Data Source
AI summary
A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.