HEMT Structure With Integrated PN Junction ESD Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
There is a need for effective ESD protection in semiconductor components, particularly in high-electron-mobility transistors (HEMTs), as existing solutions do not adequately safeguard these devices from electrical discharge damage across various operating conditions.
Innovation Solution
The integration of a substrate with a transistor and a doped well, where the transistor includes a nitride semiconductor heterostructure layer with a bandgap difference, and a doped well under an implanted area, forming a reverse-biased PN junction diode for ESD protection, which is integrated within an IC chip to reduce area and increase density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a doped well is formed in the substrate under the transistor, then ESD protection capability is improved, but device complexity increases
Solution Approach 1:
The ESD protection structure is merged with the transistor structure by forming the doped well in the substrate beneath the transistor. The shared source/drain regions of the transistor serve dual purposes: as electrical contacts for the transistor operation and as electrodes for the ESD protection diode. This integration eliminates the need for separate ESD protection structures, thereby improving reliability without proportionally increasing device complexity.
Solution Approach 2:
The doped well structure serves multiple functions simultaneously: it acts as the active region for the HEMT transistor operation and as the cathode for the ESD protection diode. The source and drain regions of the transistor double as the anode and cathode contacts for the ESD diode respectively. This multi-functionality allows a single structural element to provide both transistor functionality and ESD protection, resolving the contradiction between reliability improvement and complexity increase.
2Area of stationary object
If the ESD protection structure is integrated within the IC chip, then area is reduced and density is increased, but manufacturing precision requirements increase
Solution Approach 1:
The ESD protection structure is merged with the transistor structure by forming the doped well in the substrate beneath the transistor. The shared source/drain regions of the transistor serve dual purposes: as electrical contacts for the transistor operation and as electrodes for the ESD protection diode. This integration eliminates the need for separate ESD protection structures, thereby improving reliability without proportionally increasing device complexity.
Solution Approach 2:
The doped well structure serves multiple functions simultaneously: it acts as the active region for the HEMT transistor operation and as the cathode for the ESD protection diode. The source and drain regions of the transistor double as the anode and cathode contacts for the ESD diode respectively. This multi-functionality allows a single structural element to provide both transistor functionality and ESD protection, resolving the contradiction between reliability improvement and complexity increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides bidirectional ESD protection for transistors, reducing the risk of damage from electrical discharges and allowing for a more compact and high-density integrated circuit design.
Implementation Method 1
forming a reverse-biased PN junction diode for ESD protection
Data Source
AI summary
An electronic device includes a substrate, a transistor and a doped well. The substrate includes a first region and a second region different from the first region. The transistor is disposed on the first region of the substrate. The transistor includes a first nitride semiconductor layer disposed on the substrate, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer. The second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer. The doped well is disposed in the second region.