HEMT Protection Circuit Diverts Charge to Mitigate Voltage Surges

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Solution Overview

Problem

High electron mobility transistors (HEMTs) are vulnerable to permanent damage from over-voltage or over-current conditions due to the absence of an avalanche effect, which is not present in these devices, unlike silicon-based or GaN transistors, necessitating additional protection mechanisms.

Innovation Solution

Incorporating a protection HEMT in parallel with a power HEMT, where the protection HEMT is initially in an off-state and turns on during triggering events to divert charge and reduce voltage and current surges, with optional resistive coupling or floating gate configurations, to mitigate peak voltage and current spikes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a protection mechanism is added to HEMT, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveprotection against over-voltage damageVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the protection function with an existing HEMT device by connecting a second HEMT in parallel with the first HEMT. This merging approach integrates the protection mechanism into the existing device structure rather than adding completely separate protection components, thereby improving reliability while minimizing the increase in device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The second HEMT serves multiple functions: it acts as a protection device during over-voltage events and can also function as part of the normal circuit operation. This multi-functionality allows the protection mechanism to be achieved without requiring entirely dedicated protection components, thus improving reliability while controlling complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Device complexity

If HEMT operates without protection, then device complexity is reduced, but reliability deteriorates due to vulnerability to over-voltage

Engineering Contradiction:
Improvecircuit structureVSAvoidprotection against over-voltage damage
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The second HEMT is pre-configured in parallel with the first HEMT and remains in standby mode during normal operation. When an over-voltage event occurs, the second HEMT quickly activates to provide protection. This preliminary configuration ensures that protection is immediately available when needed without requiring complex real-time detection and activation circuits.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The second HEMT acts as an intermediary protection element between the voltage source and the first HEMT. During over-voltage events, it diverts excess current and limits voltage spikes, thereby protecting the first HEMT without requiring additional complex protection circuitry.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces the rate of change of drain-to-source voltage and peak voltage during transient events, minimizing damage to the power HEMT, and can be tailored to achieve desired performance characteristics by adjusting the area and resistance configurations.

Implementation Method 1

turns on during triggering events to divert charge and reduce voltage and current surges

Methodology Applied
Scientific EffectCharge diversion:

Implementation Method 2

a resistor can be coupled between a source and gate of the protection HEMT, and in another embodiment, the gate can electrically float

Methodology Applied
Scientific EffectResistive coupling: Electrical Resistance

Data Source

PatentUS11600611B2Electronic device including high electron mobility transistors and a resistor and a method of using the same
Publication Date: 2023.03.07 SEMICON COMPONENTS IND LLC
  • US11600611B2 patent drawing
  • US11600611B2 patent drawing
  • US11600611B2 patent drawing

AI summary

An electronic device can include a drain terminal, a control terminal, and a source terminal, a first HEMT, and a second HEMT. The first HEMT can include a drain electrode coupled to the drain terminal, a gate electrode coupled to the first control terminal, and a source electrode coupled to the source terminal. The second HEMT can include a drain electrode, a gate electrode, and a source electrode. The drain electrode can be coupled to the drain terminal, and the source electrode can be coupled to the source terminal. In an embodiment, a resistor can be coupled between the gate and source electrodes of the second HEMT, and in another embodiment, the gate electrode of the second HEMT can electrically float. During or after a triggering event, the second HEMT can turn on temporarily to divert some of the charging from the triggering event into the second HEMT.