Hermetic Capsule Metallization for Semiconductor Sealing
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Solution Overview
Problem
Existing methods for sealing semiconductor and polymer components fail to provide a hermetic seal due to degradation from moisture and gases, and existing encapsulation techniques often damage components with high temperatures and complicate electrical and optical communication.
Innovation Solution
A hermetic capsule is created using a semiconductor/metal base and lid, both fabricated from materials like InP, GaAs, or GaN, with metallization to form a sealed chamber that allows for efficient electrical and optical coupling, using the same material for the base and lid to ensure a hermetic seal and match the coefficient of temperature expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If encapsulation material is deposited over the entire circuit to seal components, then hermetic sealing is achieved, but the deposition temperature damages the components
Solution Approach 1:
The encapsulation structure is segmented into multiple functional layers: a hermetic seal layer (e.g., gold) that provides moisture and gas barrier at low temperature, and a protective coating layer (e.g., silicon nitride) that provides mechanical protection. This segmentation allows each layer to be optimized for its specific function without requiring high temperature deposition that would damage components.
2Reliability
If encapsulation material is deposited over the entire circuit to seal components, then hermetic sealing is achieved, but electrical contacts through the encapsulation become difficult
Solution Approach 1:
Electrical contact holes are extracted through the encapsulation layers at specific locations to provide electrical access to the circuit components. This allows the bulk of the encapsulation to remain intact for hermetic sealing while creating localized pathways for electrical connections.
3Reliability
If encapsulation material is deposited over the entire circuit to seal components, then hermetic sealing is achieved, but optical pathways through the encapsulation become difficult
Solution Approach 1:
Optical access holes are extracted through the encapsulation layers at specific locations to allow optical communication with the circuit components. This maintains the hermetic seal in the bulk material while creating localized optical pathways.
4Ease of operation
If encapsulation is reduced to allow electrical and optical communication, then access to components is improved, but the seal is degraded and no longer hermetic
Solution Approach 1:
The encapsulation structure exhibits local quality variations: the bulk material provides hermetic sealing, while localized regions (contact holes and optical holes) provide access functionality. The seal layer material and structure are optimized for hermeticity in sealed regions, while access regions are specifically designed to provide electrical and optical pathways without compromising overall seal integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively hermetically seals semiconductor and polymer components, preventing degradation from ambient conditions while allowing for external access and efficient optical and electrical communication, maintaining component integrity and performance.
Implementation Method 1
The lid is sealed to the semiconductor/metal base by metallization so as to form a chamber including all of the sensitive semiconductor/polymer electrical and optical components, hermetically sealing the chamber and all sensitive components from the ambient
Implementation Method 2
The metallization sealing the semiconductor/metal lid to the semiconductor/metal base also defines an optical pathway coupling an optical fiber connection to an optical component sealed within the chamber
Data Source
AI summary
A hermetic capsule including a semiconductor/metal base with sensitive semiconductor/polymer electrical and optical components formed thereon and a semiconductor/metal lid. The semiconductor/metal lid sealed to the semiconductor/metal base by metallization so as to form a chamber including all of the sensitive semiconductor/polymer electrical and optical components and hermetically sealing the chamber and all sensitive components from the ambient. External access to the sensitive semiconductor/polymer electrical and optical components is provided through a metallization.