Hermetic Optoelectronic Package with Quantum Dot Converter
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Solution Overview
Problem
Optoelectronic semiconductor devices with sensitive converter materials face challenges in longevity due to oxidation, water exposure, and temperature sensitivity, which affect their performance and service life.
Innovation Solution
The use of a hermetically sealed optoelectronic semiconductor device design incorporating a wavelength-converting quantum dot converter material, a radiation-transmissive cover member, a reflective frame member, and a barrier layer to protect the converter material from oxidation and temperature fluctuations, ensuring efficient wavelength conversion and extended service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the converter material is exposed to oxygen and water, then wavelength conversion can occur, but the converter material is destroyed by oxidation and service life is reduced
Solution Approach 1:
The patent applies the inert atmosphere principle by creating a hermetically sealed package that excludes oxygen and water from the converter material environment. The light-emitting device is packaged in an inert or controlled atmosphere that prevents oxidation of the sensitive quantum dot converter material while allowing optical transmission for wavelength conversion functionality.
Solution Approach 2:
The patent uses an intermediary approach by introducing a barrier layer or encapsulation material between the converter material and the external environment. This intermediary layer prevents direct contact between oxygen/water and the converter material while permitting light transmission, thus protecting the converter material without interfering with its wavelength conversion function.
2Reliability
If the converter material is exposed to temperature fluctuations, then the device can operate, but the converter material is impaired by temperature sensitivity
Solution Approach 1:
The patent applies beforehand cushioning by incorporating thermal management structures and insulation layers in advance within the package design. These structures cushion the converter material against temperature fluctuations before they can cause impairment, maintaining a stable thermal environment while allowing the device to operate.
3Reliability
If a hermetic seal is implemented to protect the converter material, then service life is extended, but device complexity increases
Solution Approach 1:
The patent applies merging by combining multiple protective functions into integrated package components. The hermetic seal structure is merged with the packaging substrate and encapsulation layers to form a unified protective system that extends service life without proportionally increasing complexity, as the same structures provide both mechanical support and environmental protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the service life and efficiency of optoelectronic semiconductor devices by preventing oxidation and temperature-related impairments, achieving precise color rendering and a large color gamut while maintaining high reflectivity and thermal conductivity.
Implementation Method 1
A wavelength-converting converter material is distinguished in that the wavelength of electromagnetic radiation emitted by the light-emitting diode component or by the light-emitting diode chip is converted at the converter material
Implementation Method 2
the converter material can be destroyed and/or damaged, for example, by oxidation on contact with, for example, oxygen and/or water
Implementation Method 3
maintaining high reflectivity and thermal conductivity
Data Source
AI summary
An optoelectronic semiconductor device, a method for manufacturing an optoelectronic semiconductor device and light source having an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a light-emitting diode component having at least one light-emitting diode chip and a top face, the top face arranged downstream of the light-emitting diode chip in an emission direction, wherein the light-emitting diode component further includes a molding and connection points, a conversion element arranged downstream of the light-emitting diode component in the emission direction, the conversion element includes wavelength-converting quantum dots, a frame member enclosing all side faces of the conversion element in a frame-like manner and a cover member arranged downstream of the conversion element in the emission direction, the cover member including a radiation-transmissive material, wherein the cover member covers the conversion element at a top face remote from the light-emitting diode chip.


