Heteroaromatic Hard Mask Composition for Fine Lithography Pattern Fidelity
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Solution Overview
Problem
Existing hard mask materials face challenges in achieving both high etching selectivity and solubility, leading to insufficient performance in ultra-fine semiconductor lithography processes, and they also suffer from reflectivity issues between the resist and back layer.
Innovation Solution
A hard mask composition comprising a terpolymer copolymer with specific monomer ratios and a blend of organic solvents, along with crosslinking agents and acid catalysts, to enhance etching selectivity, solubility, and minimize reflectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional phenolic resin hard mask materials are used, then etching resistance is improved, but solubility and pattern fidelity in ultra-fine processes deteriorate
Solution Approach 1:
The patent changes the chemical parameters of the hard mask material by using heteroaromatic terpolymer with specific monomer units (Formula 1) instead of conventional phenolic resin. This chemical parameter change enables the material to maintain etching resistance while improving solubility and pattern fidelity for ultra-fine lithography processes.
Solution Approach 2:
The patent creates a composite polymer structure through terpolymerization of three different monomer units in Formula 1. This composite material approach combines the benefits of different aromatic structures to achieve both high etching resistance and good solubility, resolving the contradiction between these two properties.
2Ease of operation
If organic polymer hard mask materials are used, then solubility is improved, but etching selectivity deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters by incorporating specific heteroaromatic monomer units with appropriate functional groups that provide both solubility in common solvents and high etching selectivity. The molecular weight and structural parameters are optimized to achieve this dual performance.
Solution Approach 2:
The patent introduces different monomer units with specific local chemical properties into the polymer chain. Some units provide solubility while others enhance etching resistance, creating local quality variations that resolve the contradiction between overall solubility and etching selectivity.
3Strength
If amorphous carbon layer is used, then etching resistance is improved, but photo alignment capability deteriorates due to film opaqueness
Solution Approach 1:
The patent replaces the inorganic amorphous carbon system with an organic polymer system that can provide similar mechanical protection (etching resistance) while allowing optical penetration for photoalignment. This substitution resolves the contradiction between etching resistance and photo alignment capability.
Solution Approach 2:
The patent changes the material parameter from inorganic carbon to organic heteroaromatic polymer, which fundamentally alters the optical properties while maintaining etching resistance. The polymer's molecular structure allows light transmission necessary for photoalignment procedures.
4Strength
If high molecular weight copolymer is used, then etching resistance is improved, but film uniformity and solubility deteriorate
Solution Approach 1:
The patent optimizes the molecular weight parameter within a specific range and changes the compositional parameters by using a terpolymer structure with controlled monomer ratios. This enables the formation of uniform films with good solubility while maintaining high etching resistance.
Solution Approach 2:
The patent uses a terpolymer composite structure where three different monomer units work synergistically. This composite approach provides film uniformity through balanced composition while maintaining etching resistance, resolving the contradiction between these properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides excellent etching resistance, uniform film formation, and reduced reflectivity, resulting in improved pattern evaluation and etching selectivity, suitable for ultra-fine lithographic processes.
Implementation Method 1
a heteroaromatic terpolymer having strong absorption in the ultraviolet wavelength region
Implementation Method 2
an organic polymer material having solubility in a solvent
Data Source
AI summary
An anti-reflective hard mask comprises: (a) a terpolymer in the form of a hetero aromatic represented by chemical formula 1, or a terpolymer blend comprising same; and (b) an organic solvent.wherein in the above Formula, X represents an oxygen, sulfur, or nitrogen atom, and n is 0 or 1, and Z group, as a monomer of the terpolymer, is a C6 to C40 aryl group and a heteroaryl group capable of forming a copolymer with the heteroaromatic monomer and a fluorenone derivative monomer, includes an ether bond or an amino bond, and R1 and R2 are hydrogen or a hydroxyl group, and are the same as or different from each other.