Heterogeneous Semiconductor Integration for Far-UVC Light Conversion
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Solution Overview
Problem
Existing UV light sources, particularly those based on GaN material systems, have short operating lifetimes and poor performance at emission wavelengths shorter than about 265 nm, making it challenging to generate efficient far-UVC light safely for applications like disinfection without risking human exposure.
Innovation Solution
A light source is designed with a substrate hosting a light emitting element and a nonlinear optical element, where the elements are made of different semiconductor materials, and a waveguide element optically couples them, allowing for efficient generation of far-UVC light through sum frequency generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor-based LED light sources using phosphor-based wavelength conversion are used to provide UV light, then UV light can be generated, but the operating lifetime is short and performance is poor at emission wavelengths shorter than about 265 nm
Solution Approach 1:
The patent changes the fundamental operating parameters by transitioning from phosphor-based wavelength conversion to direct bandgap emission in the far-UVC range. This involves selecting semiconductor materials with appropriate bandgap energies to directly emit photons at wavelengths shorter than 265 nm, thereby achieving both high efficiency and improved reliability in the far-UVC range
Solution Approach 2:
The patent employs composite material structures combining different semiconductor materials with complementary properties. By integrating materials optimized for specific wavelength ranges and combining them in a unified device architecture, the system achieves enhanced performance and reliability for far-UVC generation that cannot be attained with single-material phosphor-based approaches
2Productivity
If semiconductor-based LED light sources are used to provide UV light, then UV light can be generated, but the emission bandwidth is wide (>5-10 nm) making it challenging to move the emitted wavelengths into the far-UVC
Solution Approach 1:
The patent narrows the emission bandwidth by changing from phosphor-based conversion (which inherently produces broad spectral output) to direct semiconductor bandgap emission. By precisely engineering the semiconductor material composition and crystal structure, the emission wavelength can be controlled within a narrow bandwidth, enabling precise targeting of the far-UVC range
Solution Approach 2:
The patent applies local quality optimization by tailoring the semiconductor material properties at specific regions of the device to achieve precise wavelength control. Different semiconductor layers or regions are optimized for specific functions, with material composition and structure locally adjusted to produce the desired narrow-band far-UVC emission
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables compact, efficient, and safe generation of far-UVC light by converting visible light into far-UVC light using heterogeneous integration of semiconductor materials, reducing operational challenges and enhancing performance.
Implementation Method 1
a light emitting element comprising a first semiconductor material on the substrate, wherein the light emitting element is configured to generate light of a first frequency
Implementation Method 2
The nonlinear optical element is configured to receive the light of the first frequency from the light emitting element and generate light of a second frequency
Data Source
AI summary
A semiconductor light source includes a substrate, a light emitting element comprising a first semiconductor material on the substrate, and a nonlinear optical element comprising a second semiconductor material, which is different from the first semiconductor material, on the substrate. The light emitting element is configured to generate light of a first frequency, and the nonlinear optical element is configured to receive the light of the first frequency from the light emitting element and generate light of a second frequency. The substrate is native to one of the first semiconductor material or the second semiconductor material. Related devices and fabrication methods are also discussed.