Heterojunction Solar Cell Deposition Chambers for Higher Throughput
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing solar cell processing technologies face low overall processing efficiency, particularly in the deposition of amorphous silicon-based films for heterojunction solar cells, due to the complex interplay of process parameters and the difficulty in optimizing chamber settings for mass production.
Innovation Solution
A heterojunction solar cell film deposition apparatus with multiple interconnected chambers, including intrinsic and doping process chambers, optimized for simultaneous processing of multiple solar cell wafers, utilizing a roller mechanism for synchronized transfer and controlled gas delivery, and non-contact heating for efficient film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single closed chamber is used for film deposition, then the device complexity is reduced, but the processing efficiency deteriorates due to sequential processing requirements
Solution Approach 1:
The single closed chamber is segmented into multiple independent chambers (first chamber for intrinsic layer deposition, second chamber for doped layer deposition). Each chamber can operate independently with its own vacuum pump and process control, allowing parallel processing of different film layers without interfering with each other, thus improving overall processing efficiency while maintaining manageable device complexity through modular design.
2Manufacturing precision
If multiple process parameters are optimized simultaneously, then the film quality is improved, but the difficulty of detecting and measuring individual parameter influences increases
Solution Approach 1:
The deposition process is segmented into distinct stages in separate chambers: intrinsic layer deposition in the first chamber, followed by doped layer deposition in the second chamber. This segmentation allows independent optimization and measurement of process parameters for each layer type without the confounding effects of simultaneous parameter changes, making it easier to detect and measure the specific influence of each parameter on film quality.
Solution Approach 2:
The first chamber acts as an intermediary stage between substrate preparation and final doped layer deposition. By completing intrinsic layer deposition first in a controlled environment, it provides a stable base that isolates the subsequent doped layer process from earlier process variations, enabling clearer measurement of parameter effects on the final film quality.
3Productivity
If deposition time is reduced for mass production, then the productivity is improved, but the film quality may deteriorate due to insufficient deposition conditions
Solution Approach 1:
The total deposition time is segmented across multiple chambers operating in parallel or sequence. While the intrinsic layer deposits in the first chamber, the doped layer can simultaneously or subsequently deposit in the second chamber, effectively doubling the throughput without extending the overall process time significantly. Each chamber maintains adequate deposition time for quality film formation.
Solution Approach 2:
The multi-chamber design enables continuous useful action by eliminating idle time between deposition steps. Once the first chamber completes intrinsic layer deposition, the substrate can be quickly transferred to the second chamber for doped layer deposition without breaking vacuum or reconfiguring equipment, maintaining continuous productive operation while ensuring each layer receives sufficient deposition time for quality control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus significantly improves processing efficiency by reducing waiting times and enabling simultaneous processing of both sides of solar cell wafers, enhancing film quality and reducing chamber pollution, thus improving the performance and longevity of heterojunction solar cells.
Implementation Method 1
a heating preheating chamber configured to heat a carrier plate loaded with a solar cell wafer to be processed
Implementation Method 2
Amorphous silicon-based films of intrinsic layer i/doped layer n or intrinsic layer i/doped layer p are deposited on the upper and lower surfaces of crystalline silicon by PECVD technology
Data Source
AI summary
Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.