2D-3D Heterojunction Optical Sensor for Multi-Wavelength Detection
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Solution Overview
Problem
Current optical sensors face challenges in miniaturization, weight reduction, and high-resolution imaging due to increased area requirements for light reception, driving circuits, and wiring, limiting their application in unmanned vehicles that need to operate across various light wavelengths.
Innovation Solution
A heterojunction optical sensor is developed using a three-dimensional material layer doped with p-type impurities and a two-dimensional material layer doped with n-type impurities, forming a type II band alignment, allowing selective detection of visible and infrared light through voltage control without increasing the light-receiving area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple individual sensors are integrated to detect various wavelengths, then detection capability across different wavelengths is improved, but device area and weight increase, limiting miniaturization
Solution Approach 1:
The patent combines multiple detection functions into a single integrated sensor device. Different wavelength regions (visible, near-infrared, short-wave infrared) are detected within one unified sensor structure, eliminating the need for multiple separate sensors. This merging approach reduces overall device area while maintaining multi-wavelength detection capability.
Solution Approach 2:
The sensor employs a universal detection platform that can detect multiple wavelength regions simultaneously. By using a single sensor structure with different semiconductor materials optimized for different wavelength ranges, the device achieves multi-functional detection capability without requiring separate specialized sensors for each wavelength region.
2Adaptability or versatility
If multiple individual sensors are integrated to detect various wavelengths, then detection capability across different wavelengths is improved, but device weight increases
Solution Approach 1:
The patent merges multiple detection functions into a single integrated sensor device. Different wavelength regions (visible, near-infrared, short-wave infrared) are detected within one unified sensor structure, eliminating the need for multiple separate sensors. This merging approach reduces overall device weight while maintaining multi-wavelength detection capability.
3Measurement precision
If light receiving area is increased to improve detection efficiency, then detection sensitivity is improved, but device area increases, affecting miniaturization
Solution Approach 1:
The patent applies local quality optimization by using different semiconductor materials in different regions of the sensor to detect different wavelength regions. Each material is optimized for its specific wavelength range, allowing efficient use of the light-receiving area. This enables high detection sensitivity without requiring excessive total area, as each portion of the sensor is specialized for its detection function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor achieves high-performance wavelength selection and detection across a wide range, reducing manufacturing costs, miniaturization, and weight while maintaining efficient light detection.
Implementation Method 1
An optical sensor is a device that converts and detects light energy such as visible light that can be detected by the human eye, ultraviolet, and infrared light into an electrical signal, and is based on the principle of operation of a photoelectric effect.
Implementation Method 2
a two-dimensional (2D) material layer doped with second conductivity type impurities at a second doping concentration and arranged in contact with the 3D material layer to form a type II band alignment with the 3D material layer
Data Source
AI summary
Disclosed is an optical sensor including a three-dimensional (3D) material layer doped with first conductivity type impurities at a first doping concentration, and a two-dimensional material layer doped with second conductivity type impurities at a second doping concentration and arranged in contact with the three-dimensional material layer to form a type II band alignment with the three-dimensional material layer.


