Heterojunction Source Structure for Carrier Injection Velocity
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Solution Overview
Problem
Integrated circuit devices, particularly transistors formed on emerging semiconductor thin films, face challenges with lower carrier velocities at the gate region, leading to reduced aggregate carrier velocity through the channel, which affects device performance.
Innovation Solution
The structure includes a semiconductor substrate with buffer films, barrier films, a quantum well channel, source and drain structures, and electrodes, where the source structure has a wider band gap energy than the quantum well channel to launch charge carriers with non-zero kinetic energy, increasing injection velocity through a heterojunction, and the drain structure has a band gap energy equal to or less than the quantum well channel to enhance mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional semiconductor structures are used, then manufacturing is simpler, but carrier injection velocity is lower
Solution Approach 1:
The patent employs a composite semiconductor heterostructure comprising multiple layers with different band gap energies: a first semiconductor layer with band gap E1, a second semiconductor layer with band gap E2 (where E2 > E1), and a third semiconductor layer with band gap E3 (where E3 ≤ E1). This composite structure creates favorable band alignment at interfaces to enhance carrier injection velocity while managing structural complexity through deliberate material selection and layer design.
2Productivity
If uniform band gap materials are used throughout, then manufacturing is easier, but carrier acceleration is reduced
Solution Approach 1:
The patent implements local quality variations by assigning different band gap energies to specific regions: the second semiconductor layer (with wider band gap E2) is positioned at the source side to provide high injection velocity, while the third semiconductor layer (with narrower band gap E3) is positioned at the drain side to enhance carrier mobility and reduce scattering. This spatial differentiation of material properties optimizes device performance across different operational zones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases carrier injection velocity, improving direct current and radio frequency characteristics by reducing the time for charge carriers to reach peak velocity, thus mitigating issues of low acceleration and enhancing device performance.
Implementation Method 1
the source structure has a wider band gap energy than the quantum well channel to launch charge carriers with non-zero kinetic energy, increasing injection velocity through a heterojunction
Implementation Method 2
increasing injection velocity through a heterojunction
Implementation Method 3
the drain structure has a band gap energy equal to or less than the quantum well channel to enhance mobility
Data Source
AI summary
Embodiments of the present disclosure describe structures and techniques to increase carrier injection velocity for integrated circuit devices. An integrated circuit device includes a semiconductor substrate, a first barrier film coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier film, the quantum well channel comprising a first material having a first bandgap energy, and a source structure coupled to launch mobile charge carriers into the quantum well channel, the source structure comprising a second material having a second bandgap energy, wherein the second bandgap energy is greater than the first bandgap energy. Other embodiments may be described and/or claimed.