Heterostructure Gas Sensor With 1D-2D Layers for Stable H2S Detection

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Solution Overview

Problem

Conventional gas sensing techniques face challenges such as low selectivity and sensitivity, difficulty in miniaturization, and instability of sensing materials, particularly 2D materials, which affect their performance in detecting gases like hydrogen sulfide.

Innovation Solution

A heterostructure semiconductor is developed, comprising a substrate of nanosheets, 1D components such as nanorods, and a 2D layer rich in oxides and sulphates of the first and second metals. This structure provides a high surface-to-volume ratio, active sites for enhanced performance, and improved selectivity, with an abrupt interface between the substrate and 1D components to enhance response and recovery times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If 2D materials are used for sensing, then sensitivity is improved, but stability deteriorates

Engineering Contradiction:
ImprovesensitivityVSAvoidstability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent combines 2D materials (WS2 nanosheets) with 1D materials (ZnO nanorods) in a heterostructure where the 1D component provides structural stability and mechanical strength while the 2D layer maintains high sensitivity. This composite approach allows the 2D material to contribute its superior sensing sensitivity without suffering from its inherent instability when used alone

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If high thermal conditions are used for fabrication, then manufacturing precision is improved, but ease of manufacture deteriorates

Engineering Contradiction:
Improvefabrication precisionVSAvoidease of manufacture
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent employs solution-based synthesis methods with controlled chemical parameters (pH, temperature, concentration, reaction time) to fabricate the heterostructure at low temperatures. By optimizing these chemical parameters, the patent achieves high manufacturing precision in the heterostructure formation without requiring high thermal conditions, thereby maintaining ease of manufacture and enabling scalable production

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The heterostructure semiconductor achieves high sensitivity and selectivity for hydrogen sulfide detection, with a response range of 100 ppb to 5 ppm, and improved recovery times, while also being scalable for bulk manufacturing without the need for high thermal conditions.

Implementation Method 1

The heterostructure semiconductor comprises a substrate of nanosheets, 1D components fabricated on a surface of the substrate, and a 2D layer formed on the surface of the substrate in portions excluding the 1D components

Methodology Applied
Scientific EffectSurface adsorption: Adsorption

Implementation Method 2

an abrupt interface between the substrate and 1D components to enhance response and recovery times

Methodology Applied
Scientific EffectCharge transfer: Conduction (electrical)

Data Source

PatentUS12265046B2Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof
Publication Date: 2025.04.01 INDIAN INSTITUTE OF SCIENCE
  • US12265046B2 patent drawing
  • US12265046B2 patent drawing
  • US12265046B2 patent drawing

AI summary

An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.