Heterostructure Separation Region for Reduced Silicon Wafer Stress

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Solution Overview

Problem

The growth of heterostructures on silicon wafers causes high mechanical stress, leading to dislocations that compromise the mechanical stability and performance of both silicon-based and heterostructure-based electronic components.

Innovation Solution

A semiconductor electronic device is designed with a separation region that includes a trench region, a polycrystalline portion, and an epitaxial region on the semiconductor substrate, which absorbs mechanical stress and reduces dislocations, allowing for the integration of both silicon-based and heterostructure-based components in a single die.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If heterostructure is grown on silicon wafer, then electronic component performance is improved, but mechanical stress increases causing dislocations

Engineering Contradiction:

Improveelectronic component performanceVSAvoidmechanical stress

Core Design Contradiction:

ReliabilityVSStress or pressure

Solution Approach 1:

A separation region comprising a trench and polycrystalline semiconductor material is introduced between the silicon-based electronic component and the heterostructure-based electronic component. This intermediary structure absorbs mechanical stress and prevents dislocation propagation, allowing both component types to coexist on the same silicon wafer without compromising each other's performance

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The silicon wafer is segmented into distinct regions: a first region for silicon-based electronic components, a separation region with trench and polycrystalline material, and a second region for heterostructure-based electronic components. This segmentation isolates the stress fields of different component types while maintaining overall device functionality

Inventive Principle:

Principle #1Segmentation

2Stability of the object's composition

If heterostructure-based components and silicon-based components are integrated into separate dice, then mechanical stability is maintained, but area occupation and manufacturing cost increase

Engineering Contradiction:

Improvemechanical stabilityVSAvoidarea occupation

Core Design Contradiction:

Stability of the object's compositionVSArea of stationary object

Solution Approach 1:

The patent merges previously separate heterostructure-based electronic components and silicon-based electronic components into a single integrated die on one silicon wafer. The separation region enables this consolidation by providing stress isolation, thereby reducing area occupation and manufacturing cost while maintaining mechanical stability through the trench and polycrystalline material barrier

Inventive Principle:

Principle #5Merging (Combining)

3Productivity

If heterostructure is grown on silicon wafer, then integration density is improved, but dislocations compromise component performance

Engineering Contradiction:

Improveintegration densityVSAvoidcomponent performance

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The separation region with trench and polycrystalline semiconductor material acts as a mediator that prevents dislocation propagation from the heterostructure growth process to the silicon-based electronic components. This enables high integration density on the same wafer while maintaining the manufacturing precision and performance of both component types

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces mechanical stress and dislocations, enabling the integration of both types of electronic components in a single die with improved mechanical stability and electrical performance.

Implementation Method 1

a separation region that includes a trench region, a polycrystalline portion, and an epitaxial region on the semiconductor substrate, which absorbs mechanical stress and reduces dislocations

Methodology Applied

Scientific EffectMechanical stress absorption: Stress Relaxation

Data Source

PatentUS20250040210A1Semiconductor electronic device integrating an electronic component based on heterostructure and having reduced mechanical stress

Publication Date: 2025.01.30 STMICROELECTRONICS INT NV

AI summary

A semiconductor electronic device has a substrate region of semiconductor material; a first electronic component based on heterostructure, which has an epitaxial multilayer that extends on the substrate region and includes a heterostructure; and a separation region that extends on the substrate region. The separation region includes a polycrystalline region of semiconductor material of polycrystalline type which is arranged, along a first direction, alongside the epitaxial multilayer. The electronic device also has an epitaxial region of a single semiconductor material of monocrystalline type which extends on the substrate region. The polycrystalline region extends, along the first direction, between the epitaxial multilayer and the epitaxial region.