Hexafluoropropene Etching Gas Composition for Hole Shape Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional etching methods using hexafluoropropene for semiconductor manufacturing suffer from significant lateral etching, leading to poor maintenance of processed hole shapes, and the use of hexafluoro-1,3-butadiene is costly.
Innovation Solution
An etching gas comprising hexafluoropropene with additives such as hexafluorocyclopropane, pentafluoropropene, or hexafluoropropene-derived dimers and trimers, used in combination with inert, oxidizing, or reducing gases, to reduce lateral etching and maintain hole shape integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hexafluoropropene is used for etching silicon oxide film or silicon-based material, then etching can be performed, but lateral etching occurs and processed hole shape is not well maintained
Solution Approach 1:
The patent combines hexafluoropropene with at least one of hexafluorocyclopropane, pentafluoropropene, or hexafluoropropene-derived dimer/trimer to create a mixed etching gas. This combination leverages the etching capability of hexafluoropropene while the additive components suppress lateral etching, thereby maintaining hole shape integrity during the etching process.
Solution Approach 2:
The patent modifies the chemical composition parameters of the etching gas by introducing specific additives at controlled concentrations. This parameter change alters the etching chemistry to reduce lateral etching while preserving vertical etching efficiency, thus maintaining the processed hole shape.
2Manufacturing precision
If hexafluoro-1,3-butadiene is used to maintain processed hole shape, then lateral etching is reduced, but etching cost increases significantly
Solution Approach 1:
The patent replaces the expensive hexafluoro-1,3-butadiene with a combination of cheaper gases including hexafluoropropene and its derivatives. This substitution maintains the hole shape maintenance capability while significantly reducing etching costs by using more economically viable gas components.
Solution Approach 2:
The patent creates a composite etching gas mixture that combines multiple components (hexafluoropropene, hexafluorocyclopropane, pentafluoropropene, and/or dimers/trimers) to achieve the hole shape maintenance function previously requiring expensive hexafluoro-1,3-butadiene. This composite approach provides cost-effective performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed etching method reduces lateral etching by 10-30% while maintaining processed hole shapes effectively, at a lower cost compared to existing methods.
Implementation Method 1
etching a silicon oxide film or a silicon-based material having a silicon nitride film formed thereon using a gas plasma of the etching gas
Implementation Method 2
etching gas comprising hexafluoropropene and at least one component selected from the group consisting of hexafluorocyclopropane, pentafluoropropene, and a hexafluoropropene-derived dimer and/or trimer
Data Source
AI summary
The present disclosure aims to provide a novel etching method using hexafluoropropene. An etching method using hexafluoropropene is provided.