Hexagonal GAA Memory Cells With Integrated Digit Lines
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory devices face challenges in optimizing the design and fabrication of memory cells to enhance performance and reduce die size, particularly in achieving efficient gate control and capacitor arrangement.
Innovation Solution
The implementation of a memory device with hexagonal memory cells featuring gate-all-around (GAA) transistors coupled to capacitors, where the GAA transistors provide enhanced ION capability and flexible threshold voltage adjustment, and the capacitor arrangement is optimized for maximum surface area and storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional memory cell designs are used, then fabrication is simpler, but gate control is insufficient and die size is larger
Solution Approach 1:
The patent transitions from planar 2D gate control to 3D gate-all-around control by wrapping the gate electrode completely around the channel region. This dimensional change provides superior electrostatic control and threshold voltage adjustment while maintaining compatibility with conventional fabrication processes through sequential deposition and patterning steps.
Solution Approach 2:
The gate electrode is nested within the dielectric layer, which is itself nested within the memory cell structure. The gate-all-around configuration embeds the control electrode within the insulating matrix, providing enhanced control over the channel while maintaining a compact integrated structure that reduces overall device footprint.
2Quantity of substance
If more memory cells are packed into the die, then storage capacity increases, but die size and manufacturing difficulty increase
Solution Approach 1:
The memory array is segmented into repeating unit cells, each containing a capacitor and access transistor. This modular segmentation allows systematic scaling of storage capacity by simply replicating the basic cell unit, simplifying the manufacturing process while increasing density through regular patterning and standardized fabrication sequences.
Solution Approach 2:
The capacitor structure utilizes vertical stacking and 3D configuration to maximize surface area within a compact footprint. By extending the capacitor plates in multiple dimensions and utilizing the gate-all-around transistor's vertical channel, the design achieves higher storage capacity per unit area without proportionally increasing manufacturing complexity.
Data Source
AI summary
A variety of applications can include a memory device having an array of memory cells arranged as hexagonal cells, with each of the memory cells having a gate-all-around (GAA) transistor coupled to a capacitor. An access line can be coupled to gates of a first set of multiple GAA transistors of the memory cells. A digit line can be coupled to a second set of multiple GAA transistors of the memory cells, where the digit line is wrapped on a sidewall of an active area of each GAA transistor of the second set. Additional devices and methods are disclosed.