Hexagonal Light Emitting Element with Corner Holes
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Solution Overview
Problem
Existing light emitting elements face challenges in minimizing light emission at corners and surrounding areas while enhancing light extraction from the upper surface, as conventional designs often lead to uneven current distribution and reduced efficiency.
Innovation Solution
A hexagonal light emitting element with strategically placed holes and electrodes, where holes are excluded from certain corners and second p-electrodes are positioned in diagonal or farthest corners, allowing for reduced current supply to these areas and increased current to adjacent regions, enhancing light extraction from the upper surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If holes are provided in all corners of the light emitting element, then light extraction is enhanced, but light emission at corners increases which is harmful
Solution Approach 1:
The patent applies local quality by providing holes in the p-side semiconductor layer at specific locations (excluding certain corners) rather than uniformly across the entire structure. This creates spatially varying properties where holes are strategically positioned to enhance light extraction from the upper surface while avoiding corner regions where light emission should be minimized. The selective placement of holes in different zones achieves differentiated optical functionality.
Solution Approach 2:
The patent employs asymmetry by intentionally excluding holes from specific corner regions (either at least three corners or at least two farthest corners) while providing them in other areas. This asymmetric distribution creates intentional imbalance in the structure to control light emission patterns, reducing corner light emission while maintaining or enhancing upper surface light extraction efficiency.
2Reliability
If second p-electrodes are positioned in all corners, then electrical connection is improved, but current density becomes uneven leading to reduced efficiency
Solution Approach 1:
The patent applies local quality by positioning second p-electrodes in specific corner regions rather than uniformly distributing them. The electrodes are placed in corners where holes are not provided, creating localized electrical connection points that optimize current density distribution. This selective positioning ensures reliable electrical connection while maintaining efficient light extraction by avoiding uniform distribution that would create uneven current patterns.
Solution Approach 2:
The patent employs equipotentiality principles by strategically placing second p-electrodes in specific corners to create balanced electrical potential distribution across the light emitting element. This positioning helps equalize current density across different regions, preventing concentration in specific areas and ensuring uniform electrical characteristics while maintaining high light extraction efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes light emission at corners and surrounding areas while increasing light extraction efficiency from the upper surface, as demonstrated by simulations showing reduced current density at corners and increased density in adjacent areas, leading to improved light emitting device performance.
Implementation Method 1
an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes
Implementation Method 2
a light emitting element with a hexagonal planar shape, having: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer
Data Source
Figure 1A
Figure 1B
Figure 1C~1D
AI summary
A light emitting element (10) with a hexagonal planar shape, has: an n-side semiconductor layer (2n); a p-side semiconductor layer (3p) provided on the n-side semiconductor layer; a plurality of holes (6) that are provided to an area excluding at least three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode (4p) provided in contact with the p-side semiconductor layer; second p-electrodes (5p) provided to the at least three corners on the first p-electrode; and an n-electrode (7n) that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.