Hexagonal Matrix Schottky Diode for High Current Density
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Solution Overview
Problem
Schottky barrier diodes have limitations in current density, which affects their switching characteristics and yield per unit wafer area.
Innovation Solution
A Schottky barrier diode design featuring a hexagonal p-type region arranged in a matrix shape with a higher ion doping concentration p+ type region, where the n-type layer encloses the p-type region, increasing the contact area with the p+ type region, thereby enhancing current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a conventional Schottky barrier diode structure is used, then the device is simple to manufacture, but the current density is limited
Solution Approach 1:
The diode structure is segmented into multiple p-type regions (first p-type region and second p-type region) with different doping concentrations, arranged in a matrix pattern. This segmentation allows each region to contribute differently to current flow, increasing overall current density while maintaining a manageable structural complexity through systematic arrangement.
Solution Approach 2:
Different regions of the diode are assigned different local properties: the first p-type region has a higher doping concentration for enhanced hole injection, while the second p-type region has a lower doping concentration for optimized electric field distribution. This local quality differentiation enables superior current density without requiring complete structural redesign.
2Quantity of substance
If the diode area is increased to improve current density, then the current density increases, but the yield per unit wafer area decreases
Solution Approach 1:
The patent transitions from a conventional planar arrangement to a three-dimensional matrix structure with multiple doping levels. By stacking first and second p-type regions in a vertical matrix pattern, the design achieves enhanced current density without proportionally increasing the lateral footprint, thereby maintaining higher yield per unit wafer area.
Solution Approach 2:
The structure employs a nested arrangement where second p-type regions are positioned between and around first p-type regions in a matrix configuration. This nesting allows multiple functional regions to occupy overlapping spatial zones, maximizing current density within a compact area that preserves wafer utilization efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design increases hole current density and overall current density, reducing the area required for each diode, leading to improved yield and more diodes per unit wafer.
Implementation Method 1
A Schottky barrier diode (SBD) uses a Schottky junction in which a metal and a semiconductor are joined
Implementation Method 2
improving a breakdown voltage by overlapping of PN diode depletion layers that are diffused when a reverse voltage is applied
Implementation Method 3
A p+ type region and a p type region having different ion doping concentrations are formed to reduce an electric field of the Schottky junction region
Data Source
AI summary
A Schottky barrier diode includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate. The p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.