Hexagonal Memory Cell Layout With Axial Transistor-Capacitor Alignment

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Solution Overview

Problem

Conventional transistors in integrated circuits face challenges in efficiently routing electrical signals between the transistor and charge storage elements, leading to complex patterning requirements and reduced memory density due to rectangular arrangements, which hinder cost-effectiveness and functionality.

Innovation Solution

The integration of gate-all-around (GAA) or channel-all-around (CAA) transistors in a hexagonally packed arrangement, aligned with axially symmetric capacitors, allows for greater memory density and reduced costs by enabling more efficient signal routing and capacitance preservation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional transistors are used in a device layer with complex patterning of lines and vias to route electrical signals to charge storage elements outside the device layer, then electrical signal routing is achieved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveease of manufactureVSAvoiddevice complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent moves the charge storage element from outside the device layer to within the device layer, utilizing the vertical dimension. This integration eliminates the need for complex interlayer routing via lines and vias, as both the transistor and charge storage element now reside in the same layer, simplifying the overall device structure and manufacturing process.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent combines the transistor and charge storage element into a single integrated structure within the device layer. By merging these previously separate components into one unified device, the patent eliminates the need for external routing connections and reduces the overall device complexity while maintaining functionality.

Inventive Principle:
Principle #5Merging (Combining)

2Quantity of substance

If rectangular arrangements of transistors are used in memory cells, then conventional manufacturing is maintained, but memory density is reduced

Engineering Contradiction:
Improvememory densityVSAvoidproductivity
Core Design Contradiction:
Quantity of substanceVSProductivity

Solution Approach 1:

The patent employs a hexagonal arrangement of transistors instead of conventional rectangular layouts. The hexagonal geometry allows for closer packing of transistor structures, optimizing space utilization within the device layer and enabling higher memory density without compromising manufacturing feasibility.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Reliability

If transistors are integrated with axially symmetric capacitors in hexagonal arrangement, then memory density and capacitance are improved, but manufacturing precision requirements increase

Engineering Contradiction:
ImprovefunctionalityVSAvoidmanufacturing precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent designs a unified hexagonal structure where the transistor and axially symmetric capacitor share common geometric features and alignment references. This universal design approach allows both components to be manufactured using the same patterning processes and alignment techniques, reducing the overall manufacturing precision requirements despite the advanced hexagonal arrangement.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12148734B2Transistors, memory cells, and arrangements thereof
Publication Date: 2024.11.19 INTEL CORP
  • US12148734B2 patent drawing
  • US12148734B2 patent drawing
  • US12148734B2 patent drawing

AI summary

Disclosed herein are transistors, memory cells, and arrangements thereof. For example, in some embodiments, an integrated circuit (IC) structure may include a plurality of transistors, wherein the transistors are distributed in a hexagonally packed arrangement. In another example, in some embodiments, an IC structure may include a memory cell including an axially symmetric transistor coupled to an axially symmetric capacitor, wherein the axis of the transistor is aligned with the axis of the capacitor.