Hexagonal Semiconductor Diode Structure for High Current Density

The diode structure is divided into multiple unit structures arranged in an array. Each unit structure contains first and second doped regions forming a portion of the p-n connection. By segmenting the diode into multiple units, the total circumferential length is increased while maintaining a compact overall device footprint, thus increasing allowable electrical current without proportionally increasing device size.

The patent transitions from a conventional linear or simple rectangular diode structure to a two-dimensional array of unit structures. The first and second doped regions are arranged in a pattern that creates a extended p-n connection interface in multiple directions. This dimensional arrangement increases the circumferential length within a limited area, resolving the contradiction between current capacity and device size.

The diode is segmented into repeating unit structures that can be manufactured using standard semiconductor fabrication processes. Each unit contains first and second doped regions with specific conductivity types. This segmentation allows the complex function of high current capacity to be achieved through replication of simple, manufacturable units rather than a single complex structure.

The patent applies local quality by doping specific regions (first and second doped regions) with specific conductivity types (first and second conductivity types) within each unit structure. This localized doping creates the necessary p-n connection interface with optimized electrical properties at each location, while the overall array provides the increased circumferential length. The local quality approach maintains manufacturability while achieving the desired electrical performance.