Hexagonal Lateral Semiconductor Layout for Low-Leakage eHEMTs
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Solution Overview
Problem
The existing stripe configuration in power semiconductor devices leads to increased leakage and electrical weakness, particularly in pGaN based eHEMTs, due to the formation of two-dimensional electron gas at the stripe ends, causing symmetry rupture and material damage, which results in high drain leakage and degradation over time.
Innovation Solution
The adoption of a hexagonal lateral semiconductor device with full topside current extraction, eliminating the stripe structure and restoring symmetry by using a closed unit cell layout, which reduces parasitic leakages and eliminates the need for backside contacting technologies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If stripe configuration is used in pGaN based eHEMTs, then device structure is simple and widely used, but leakage increases due to two-dimensional electron gas formation at stripe ends and symmetry rupture
Solution Approach 1:
The gate structure is segmented into multiple pGaN stripes rather than a single continuous stripe. This segmentation eliminates the formation of two-dimensional electron gas at stripe ends by creating multiple isolated gate regions, thereby reducing leakage while maintaining manufacturing simplicity
Solution Approach 2:
The invention intentionally introduces asymmetric doping configurations in the termination regions adjacent to the source and drain. This asymmetric design compensates for the symmetry rupture caused by the stripe configuration, reducing leakage by balancing the electric field distribution in the termination areas
2Reliability
If hexagonal closed unit cell layout is used, then symmetry is restored and parasitic leakages are eliminated, but device layout complexity increases
Solution Approach 1:
The invention uses asymmetric doping configurations within the hexagonal unit cell layout to restore overall symmetry. By placing different doped regions asymmetrically in termination areas, the electric field distribution is balanced, eliminating parasitic leakages while maintaining the symmetric hexagonal geometric structure
Solution Approach 2:
The hexagonal unit cell incorporates local quality variations through asymmetric doping in specific termination regions. This allows the overall symmetric hexagonal layout to maintain aesthetic and structural simplicity while locally addressing leakage issues through targeted doping configurations
Data Source
AI summary
A semiconductor device includes a die layer comprising a main surface. A plurality of first terminals are mounted on the main surface of the die layer, the first terminals forming a grid of unit cells with hexagon contours arranged side-by-side across the main surface of the die layer. A plurality of second terminals are mounted on the main surface of the die layer, each second terminal forming a hexagon contour arranged within a unit cell of a respective first terminal. A plurality of third terminals is mounted on the main surface of the die layer, each third terminal formed as a hexagon and arranged within the hexagon contour of a respective second terminal. At least two metallization layers are arranged over the plurality of first, second and third terminals and are configured to receive electrical currents from the plurality of first, second and third terminals.