HF Processing Liquid Composition for Selective Semiconductor Etching
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Solution Overview
Problem
The miniaturization of semiconductor substrates has made it difficult to selectively etch only the desired region using existing semiconductor processing liquids, which lack sufficient selectivity.
Innovation Solution
A semiconductor processing liquid comprising hydrofluoric acid and an organic solvent with a specific compound represented by Formula (1), allowing for improved etching selectivity and uniformity, particularly for boron phosphorus glass films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional semiconductor processing liquids are used, then the processing can be performed on semiconductor substrates, but the etching selectivity is insufficient due to miniaturization of wiring
Solution Approach 1:
The patent changes the chemical parameters of the processing liquid by incorporating specific organic solvents (cyclic carbonates, cyclic carbamates, chain carbonates, chain carbamates) with defined molecular structures and dipole moments. This parameter change enables the liquid to maintain effective etching capability while achieving high selectivity on miniaturized semiconductor structures, resolving the contradiction between etching selectivity and applicability to miniaturized features.
Solution Approach 2:
The patent creates a composite processing liquid system by combining hydrofluoric acid with specific organic solvents having particular molecular structures. This composite formulation achieves both high etching selectivity and effectiveness on miniaturized wiring structures, simultaneously improving manufacturing precision and adaptability to advanced semiconductor nodes.
2Manufacturing precision
If existing processing liquids are used, then general processing can be performed, but high selectivity for desired materials cannot be achieved among various constituent materials
Solution Approach 1:
The patent imparts local quality to the processing liquid by selecting organic solvents with specific molecular characteristics (cyclic or chain structure, carbonate or carbamate type, defined dipole moments). This localized chemical property enhancement enables selective interaction with desired materials while maintaining ease of manufacture through well-defined molecular structure requirements.
3Manufacturing precision
If conventional processing liquids are used, then processing can be performed on various materials, but uniformity of etching is insufficient
Solution Approach 1:
The patent achieves uniform etching by controlling specific parameters of the organic solvent components, including dipole moment ranges and molecular structure types. These parameter controls ensure consistent chemical interaction across the substrate surface, improving etching uniformity while keeping the liquid composition relatively simple with well-defined chemical specifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high selectivity in processing semiconductor substrates, enhancing etching selectivity and uniformity, thereby improving the processing of desired materials over various constituent materials.
Implementation Method 1
a semiconductor processing liquid including hydrofluoric acid (A), and an organic solvent (B)
Data Source
AI summary
A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y11 and Y21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X1, Y11, and Y21 do not contain hydroxyl groups in structures thereof, and when X1 is a single bond, Y10 is not —O—)H3C—Y11—Y10—X1—Y20—Y21—CH3 (1).