High-Frequency Module Ground Layout for Inductor Q Retention

The patent transitions from a two-dimensional planar ground electrode layout to a three-dimensional multilayer ground structure. By stacking multiple ground layers at different heights and positions around the inductor, the solution addresses both the Q value improvement and frequency characteristic maintenance through spatial distribution in the vertical dimension.

Different ground layers are positioned at specific locations relative to the inductor winding portion. The first ground layer is placed at a first position, the second ground layer at a second position, creating localized ground regions that optimize both the inductor's Q value and minimize magnetic field interference with other components.

The patent uses vertical stacking of ground layers at different heights (first position and second position in the thickness direction) to achieve close proximity to the inductor for magnetic field control without planar overlap. This three-dimensional arrangement allows the ground layers to be positioned near the winding portion while maintaining electrical isolation through the insulating layers.

The ground structure is divided into multiple separate ground layers instead of a single continuous ground plane. Each ground layer is positioned at a different vertical level, allowing selective placement near the inductor without overlapping the winding portion, thus segmenting the ground function into multiple spatial zones.