High-Frequency Module Thermal Isolation for SAW Filter Stability
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Solution Overview
Problem
High-frequency electronic modules face electrical characteristic deterioration due to heat generated by semiconductor elements, which affects the performance of surface acoustic wave filters and other electronic components.
Innovation Solution
The electronic module design includes a first and second insulating layer with intermediate layers of lower thermal conductivity, strategically positioned to reduce heat transfer between semiconductor and electronic elements, along with a manufacturing method that forms these layers to ensure optimal thermal isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the electronic element is disposed to overlap the semiconductor element in plan view to reduce module height, then the module height is reduced, but the electrical characteristics of the electronic element deteriorate due to heat from the semiconductor element
Solution Approach 1:
A resin layer with low thermal conductivity is introduced as an intermediary between the semiconductor element and the electronic element. This resin layer acts as a thermal barrier that blocks heat transfer from the semiconductor element to the electronic element, thereby preventing deterioration of the electronic element's electrical characteristics while allowing the overlapping configuration to maintain reduced module height
Solution Approach 2:
The patent applies the principle of local quality by using materials with different thermal conductivity properties in different regions. Specifically, a resin layer with low thermal conductivity is placed locally between the semiconductor element and electronic element where heat transfer occurs, while other regions may use materials with different properties optimized for their specific functions
2Reliability
If the distance between the electronic element and semiconductor element is increased to reduce heat transfer, then the electrical characteristics are maintained, but the module height increases
Solution Approach 1:
The low thermal conductivity resin layer serves as a thermal barrier that enables the electronic element to be positioned closer to the semiconductor element without suffering from heat-induced deterioration. This intermediary layer allows vertical integration while maintaining electrical characteristics
Solution Approach 2:
Instead of increasing horizontal separation distance to reduce heat transfer, the patent transitions to a vertical solution by introducing a resin layer with different thermal properties in the thickness direction. This dimensional approach allows overlapping configuration while blocking heat transfer paths
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces heat conduction from semiconductor elements to electronic elements, preventing thermal expansion and maintaining the frequency characteristics of surface acoustic wave filters, while allowing for a reduced module height and thermal management.
Implementation Method 1
The first intermediate layer has a thermal conductivity that is lower than a thermal conductivity of the first insulating layer and a thermal conductivity of the second insulating layer
Data Source
AI summary
A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.