High-Frequency Switch Drive Circuit for Safe Power-Off States
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Solution Overview
Problem
High-frequency semiconductor switches with integrated circuits on a Silicon on Insulator (SOI) substrate face issues with erroneous actions due to the disconnection or shutdown of high-potential power supplies, leading to indefinite switch circuit states and potential errors in communication devices.
Innovation Solution
The implementation of a high-frequency semiconductor switch with a serial-parallel conversion circuit, power supply circuit, and drive circuit, utilizing Silicon on Insulator (SOI) type Metal Oxide Semiconductor (MOS) transistors, which includes a differential type level shifter and inverter to manage multiple voltage levels, ensuring reliable signal transmission and preventing erroneous actions by maintaining a defined switch circuit state even when high-potential power sources are shut off.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple high-potential power supplies are used in integrated circuits on SOI substrate, then high functionality and high performance are achieved, but erroneous actions occur when power supplies are shut off or disconnected
Solution Approach 1:
The patent applies preliminary action by setting the switch circuit to a predetermined safe state (turning off all switches) before the power supply is completely shut off. The detection circuit monitors the power supply state in advance and triggers the protective action while power is still available, preventing the indefinite state that would occur after power loss.
Solution Approach 2:
The patent implements feedback through the detection circuit that continuously monitors the state of the power supply and provides information to the control logic. This feedback mechanism allows the system to detect when power is being reduced or shut off and respond appropriately by setting the switch circuit to a safe predetermined state, thereby preventing erroneous actions.
2Loss of energy
If SOI type MOS transistors are used instead of HEMT, then parasitic capacitance and electric power loss are reduced, but integration of multiple circuits requires multiple power supplies which increases complexity
Solution Approach 1:
The patent applies universality by designing the detection circuit and control logic to work across multiple different power supply configurations and circuit types integrated on the SOI chip. The same protective mechanism handles power monitoring and safe state transitions for various digital calculation processing circuits, serial-parallel conversion circuits, and switch circuits, reducing the need for separate protective mechanisms for each circuit.
3Volume of moving object
If digital calculation processing circuits and switch circuits are integrated on one chip, then miniaturization and high integration are achieved, but the risk of erroneous actions increases when power supplies are disconnected
Solution Approach 1:
The patent introduces an intermediary detection circuit and control logic that mediates between the power supply and the integrated circuits. This intermediary layer monitors power supply status and coordinates the transition of multiple circuits to safe states, preventing erroneous interactions between the digital calculation processing circuits, serial-parallel conversion circuits, and switch circuits that could occur during power transitions.
Data Source
AI summary
A high-frequency semiconductor switch includes a serial-parallel conversion circuit, a power supply circuit, and a drive circuit. In the serial-parallel conversion circuit, a parallel data signal is formed from a serial data signal input thereto. In the power supply circuit, a first positive voltage, a second positive voltage, and a negative voltage are formed from a high-potential power source supplied thereto. The drive circuit is supplied with the first positive voltage, the second positive voltage, and the negative voltage, and includes an inverter to which the parallel data signal is input and a differential type of level shifter to which the parallel data signal and the output signal of the inverter is provided. The drive circuit outputs the second positive voltage as a high level signal, and the negative voltage as a low level signal, to a switching circuit, and the switching circuit performs selective switching based thereon.