High-Angle Ion Extraction Optics for Selective Substrate Treatment
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Solution Overview
Problem
Existing ion implantation technologies face challenges in controlling ion beam incidence angles, particularly for non-perpendicular applications like angled etching, which complicates processes such as trench sidewall etching and photoresist shrinking, due to the difficulty in managing ion beams at high angles of incidence.
Innovation Solution
A processing system with a non-planar extraction assembly, including elongated extraction apertures arranged at high angles, generates ion beams at angles between 50 degrees and 85 degrees relative to the substrate, allowing for precise control and preferential treatment of substrate surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If perpendicular incidence ion implantation is used, then the process is simple and well-controlled, but it cannot achieve angled etching applications such as trench sidewall etching, hole elongation, and photoresist shrinking
Solution Approach 1:
The patent transitions from perpendicular (1D) ion incidence to high-angle (oblique) ion incidence by positioning the extraction assembly laterally relative to the substrate. This dimensional change enables angled etching applications including trench sidewall etching, hole elongation, and photoresist shrinking that are inaccessible to normal incidence methods
Solution Approach 2:
The patent introduces a plasma immersion ion implantation chamber as an intermediary system that generates plasma and accelerates ions through a sheath potential. This intermediary approach allows flexible control of ion angle and energy, bridging the gap between simple perpendicular implantation and complex angled etching requirements
2Adaptability or versatility
If high angle ion beams are used for angled etching, then applications like trench sidewall etching and photoresist shrinking are enabled, but control of the ion beam becomes more difficult
Solution Approach 1:
The patent controls ion beam parameters by adjusting the plasma potential, substrate bias voltage, and extraction assembly geometry. By changing these parameters, the system maintains ease of operation while achieving high-angle ion beams for angled etching applications
Solution Approach 2:
The system employs real-time monitoring and feedback control of ion flux, energy, and angle through plasma diagnostics and adjustable power supply. This feedback mechanism enables precise control of high-angle ion beams, overcoming the inherent difficulty in managing oblique ion incidence
3Manufacturing precision
If ion extraction is performed at high angle, then preferential treatment of substrate surfaces is achieved, but ion flux and processing throughput may be reduced
Solution Approach 1:
The patent employs dynamic control of the extraction assembly position and substrate rotation to optimize both surface selectivity and ion flux. By dynamically adjusting the ion beam angle and scanning patterns, the system maintains high manufacturing precision while improving processing throughput through better utilization of ion flux on complex 3D structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient and controlled ion treatment of substrate surfaces at high angles of incidence, increasing ion flux and processing throughput, and allowing simultaneous treatment of oppositely-oriented surfaces.
Implementation Method 1
a plasma chamber operable to generate a plasma
Implementation Method 2
an extraction assembly... generating an extracted ion beam at a high angle of incidence
Data Source
AI summary
A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.