High Aspect Ratio 3D Capacitor Fabrication via Inversion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing technologies face challenges in improving the capacitance density of 3D capacitors due to the difficulties and high costs associated with processing high aspect ratio 3D structures, which limits the contact area between electrodes and the dielectric medium.
Innovation Solution
The solution involves forming either a pillar structure or a trench structure with an aspect ratio greater than 10, where the pillar structure is convenient to process and cost-effective, and the trench structure is enhanced by a material layer to increase aspect ratio without increasing depth, thereby improving capacitance density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If direct processing of high aspect ratio 3D structure is performed, then capacitance density can be improved, but processing difficulty and cost increase significantly
Solution Approach 1:
Instead of directly etching high aspect ratio trenches which is difficult and costly, the patent inverts the approach by first forming low aspect ratio protrusions and then using them as templates to create the high aspect ratio 3D structure through subsequent processing steps, making the manufacturing feasible and cost-effective
Solution Approach 2:
The patent performs preliminary actions by first forming protrusions with lower aspect ratios that are easier to manufacture, then uses these pre-formed structures as templates to guide the formation of the final high aspect ratio 3D structure, reducing the overall processing difficulty
2Quantity of substance
If trench structure with increased depth is used to increase aspect ratio, then capacitance density improves, but processing failure risk increases due to excessive depth
Solution Approach 1:
The patent transitions from the traditional trench structure to a protrusion-based structure, changing the dimensional approach from etching downward to building upward, thereby achieving high aspect ratio without the processing failures associated with excessive trench depth
3Quantity of substance
If pillar structure with large aspect ratio is processed, then capacitance density improves, but processing cost increases
Solution Approach 1:
The patent forms protrusions with lower aspect ratios as preliminary structures that are easier and cheaper to manufacture, then uses these as templates to create the final high aspect ratio pillar structures, reducing the overall processing cost while maintaining high capacitance density
Data Source
AI summary
A capacitor and a method of fabricating the capacitor are provided. The capacitor includes a structure for forming a three-dimensional capacitor, the structure being a pillar structure or a trench structure; where when the structure is a pillar structure, the aspect ratio of the pillar structure is more than 10; when the structure is a trench structure, the capacitor further includes a substrate, the trench structure is formed by a material layer disposed on the surface of a base trench of the substrate, and the aspect ratio of the trench structure is more than 10. The aspect ratio of the pillar structure of the capacitor or the aspect ratio of the trench structure may be more than 10, so that the performance of the capacitor is better.