High Aspect Ratio Circuit Pattern Support Structures
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Solution Overview
Problem
Conventional high aspect ratio silicon trench etching methods, such as reactive ion etching, fail to prevent bending or collapse issues in line structures during the formation of high aspect ratio trench capacitor DRAMs, which can severely impact electrical performance.
Innovation Solution
The method involves forming supporting circuit lines or isolation structures to support target circuit lines, using a combination of etching and deposition processes to create gap structures that prevent bending or collapse, allowing for the formation of high aspect ratio circuit patterns without structural failure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes (such as RIE) are used to form high aspect ratio line structures, then the aspect ratio of the trenches can be increased to maintain sufficient capacitance, but the line structures become vulnerable to bending or collapse issues that severely impact electrical performance
Solution Approach 1:
The patent applies preliminary action by forming supporting lines and isolation structures before the final high aspect ratio trench etching. These supporting structures are prepared in advance to prevent bending or collapse during subsequent thermal oxidation and other processing steps. The supporting lines are formed at a first depth and isolation structures at a second depth, creating a staged support system that stabilizes the target circuit lines throughout the manufacturing process.
Solution Approach 2:
The patent uses supporting lines and isolation structures as intermediary elements that mediate between the substrate and the target circuit lines. These intermediaries provide mechanical support and prevent direct contact between the high aspect ratio trench walls and the substrate, thereby preventing collapse while allowing the trenches to achieve the necessary height for sufficient capacitance.
2Quantity of substance
If the aspect ratio of line structures is increased to maintain capacitance in smaller devices, then the capacitance can be maintained while critical dimensions are reduced, but the line structures become more prone to bending or collapse during thermal oxidation and other following processes
Solution Approach 1:
The supporting lines and isolation structures are formed in advance before the high aspect ratio trenches are created. This preliminary support system is established to maintain structural integrity during thermal oxidation and subsequent processing, enabling the trenches to achieve the necessary aspect ratio for sufficient capacitance without collapsing.
Solution Approach 2:
The patent employs a composite structure combining different materials: the substrate, supporting lines (first material), isolation structures (second material), and target circuit lines. This composite approach allows each material to be optimized for its specific function - the supporting materials provide mechanical stability while the target lines provide the necessary capacitance functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of high or ultra-high aspect ratio circuit patterns without bending or collapse, ensuring stable electrical performance and enabling further processing steps like thermal oxidation without structural issues.
Implementation Method 1
Many methods, such as reactive ion etching (RIE), have been proposed to manufacture the silicon trenches with significantly high aspect ratios.
Implementation Method 2
forming supporting isolation structures in the space between said parallel lines and said supporting line
Data Source
AI summary
A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.