High-Chi Diblock Copolymers for Perpendicular DSA Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional lithography techniques face limitations in achieving feature sizes below 10 nm due to aberrations, focus issues, and minimum exposure wavelengths, while existing directed self-assembly block copolymers with lower chi parameters struggle to orient perpendicular to the substrate, requiring additional underlayers and top-coats, complicating the process and increasing costs.
Innovation Solution
Development of tunable high-chi block copolymers with altered chi parameters, allowing orientation on conventional underlayers without additional top-coats, achieved through alternating copolymerization with diphenylethylene derivatives, enhancing etch resistance and pattern transfer capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography techniques are used, then existing manufacturing processes can be maintained, but feature sizes below 10 nm cannot be achieved due to aberrations, focus limitations, and minimum exposure wavelengths
Solution Approach 1:
The patent modifies the chemical composition parameters of block copolymers by incorporating alternating copolymer segments with high chi parameters (χ > 0.04), which fundamentally changes the self-assembly behavior and enables perpendicular orientation on conventional underlayers, achieving sub-10nm features without changing the lithography process itself
Solution Approach 2:
The invention creates composite block copolymer structures combining etch-resistant segments (such as polystyrene-based alternating copolymers) with highly etchable segments (such as poly(methyl methacrylate)), forming a material that simultaneously provides structural integrity during etching and enables precise pattern transfer at sub-10nm scales
2Manufacturing precision
If block copolymers with lower chi parameters are used for directed self-assembly, then self-assembly can occur, but perpendicular orientation to the substrate cannot be achieved, requiring additional underlayers and top-coats
Solution Approach 1:
The patent specifically targets and modifies the chi parameter (χ) of block copolymers to be greater than 0.04 through alternating copolymerization, which fundamentally changes the interaction energy between blocks and enables spontaneous perpendicular orientation on conventional underlayers without additional process steps
Solution Approach 2:
The invention extracts and eliminates the need for additional orientation-control layers (top-coats and specialized underlayers) by incorporating the orientation-directing functionality directly into the block copolymer structure itself through high chi parameter design, simplifying the overall fabrication process
3Manufacturing precision
If conventional block copolymers are used for directed self-assembly, then pattern multiplication can be achieved, but feature sizes below 20 nm cannot be obtained due to limited chi parameters
Solution Approach 1:
The patent designs composite block copolymers where one block provides high etch resistance (alternating copolymer segments with aromatic rings and rigid structures) while the other block provides high etchability, enabling simultaneous achievement of sub-20nm features and reliable pattern transfer through plasma etching
Solution Approach 2:
The invention applies local quality by creating distinct regions within the block copolymer structure: one block with high etch resistance for maintaining pattern fidelity during processing, and another block with high etchability for complete removal to define final features, with each block optimized for its specific function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables feature sizes below 20 nm with improved etch resistance and reduced process complexity by using high-chi block copolymers that can self-assemble directly on existing underlayers, maintaining narrow molecular weight distribution and high etch resistivity.
Implementation Method 1
directed self-assembly of block copolymers is a method useful for generating very small patterned features
Implementation Method 2
UV radiation transmitted through a mask causes a photochemical reaction in the photoresist such that the exposed regions are removed with a developer solution
Implementation Method 3
conventional IC plasma processing
Data Source
AI summary
The disclosed subject matter relates to a block polymer comprising structure (1): (A)-(C)-(B), wherein (A) is a first polymer block segment comprising a block segment selected from structure (1a), structure (1b), and a mixture of structures (1a) an (1b), (C) is a spacer moiety comprising structure (1c); and wherein B) is a second polymer block segment comprising repeat units derived from either an alkyl 2-methylenealkanoate, a lactone; a cyclic carbonate, an oxirane, or an oxetane. The disclose matter also pertains to a composition of said block polymer in a spin casting solvent and using this solution in a process of directed self-assembly.