High-Current Electron Beam Surface Processing Apparatus

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional surface processing apparatuses using electron beams for semiconductor manufacturing have low current values, limiting processing speed and throughput.

Innovation Solution

A surface processing apparatus that irradiates inspection objects with electron beams of higher current values (10 nA to 100 A) using multiple electron sources, lens systems, and photoelectric cathodes, along with optical microscopes for precise positioning, enabling high-speed processing and enhanced throughput.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional electron beam exposure devices are used with small current values (approximately 1 nA or less), then the electron beam can be generated with conventional electron sources, but the processing speed is slow and throughput is low

Engineering Contradiction:
ImprovethroughputVSAvoidprocessing speed
Core Design Contradiction:
ProductivityVSSpeed

Solution Approach 1:

The patent combines multiple electron sources (first and second electron sources) to generate multiple electron beams simultaneously, merging their currents to achieve high total current (10 nA to 100 µA) while maintaining the ability to perform surface processing at high speed and high throughput

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If multiple electron sources are used to generate high current electron beams (10 nA to 100 µA), then processing speed and throughput are enhanced, but the device complexity increases

Engineering Contradiction:
ImprovethroughputVSAvoiddevice complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent designs a multi-functional apparatus that can perform both observation functions (using the optical microscope) and surface processing functions (using high-current electron beams) within a single integrated system, reducing the need for separate equipment and simplifying the overall workflow despite using multiple electron sources

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Speed

If high current electron beams (10 nA to 100 µA) are used for surface processing, then high-speed processing is achieved, but precise positioning and control become more difficult

Engineering Contradiction:
Improveprocessing speedVSAvoidpositioning precision
Core Design Contradiction:
SpeedVSMeasurement precision

Solution Approach 1:

The patent uses an optical microscope to observe and determine the position to be processed before irradiating with the electron beam, performing preliminary positioning at lower magnification and then switching to electron beam mode for high-speed processing, ensuring accurate positioning before high-current irradiation begins

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves high-speed surface processing and significantly enhances throughput by using high-current electron beams across larger areas, improving processing efficiency compared to conventional methods.

Implementation Method 1

a light source which generates light having a predetermined wavelength; a photoelectric cathode which generates the electron beam by being irradiated with the light emitted from the light source

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS9852878B2Surface processing apparatus
Publication Date: 2017.12.26 EBARA CORP
  • US9852878B2 patent drawing
  • US9852878B2 patent drawing
  • US9852878B2 patent drawing

AI summary

A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.