High-Dynamic-Range Pixel With Storage Capacitor

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Solution Overview

Problem

Conventional image sensor pixels have a limited dynamic range due to the small dimensions of photodiodes, which restricts their ability to store photogenerated charges, and increasing pixel dimensions is not a viable solution.

Innovation Solution

Incorporating a storage capacitor connected to the photodiode and a reset MOS transistor, along with a coupling capacitor between the photodiode and sense node, to enhance the storage capacity of photogenerated charges without increasing pixel dimensions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If photodiode dimensions are decreased to form smaller pixels, then pixel dimensions are reduced, but dynamic range decreases

Engineering Contradiction:
Improvepixel dimensionsVSAvoidstorage capacity of photogenerated charges
Core Design Contradiction:
Area of moving objectVSQuantity of substance

Solution Approach 1:

The pixel is segmented into two separate charge storage regions: a first storage node connected to the photodiode for storing photogenerated charges, and a second storage node connected to a storage capacitor for storing additional charges. This segmentation allows the pixel to maintain small dimensions while achieving extended dynamic range through distributed charge storage across multiple nodes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a temporal dimension to charge storage by implementing dual storage nodes that can be activated at different times during the readout cycle. The first storage node operates during the integration phase, while the second storage node becomes active during overflow conditions, effectively adding a time-based dimension to the storage capacity without increasing physical area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If photodiode dimensions are increased to increase dynamic range, then storage capacity of photogenerated charges increases, but pixel dimensions increase

Engineering Contradiction:
Improvestorage capacity of photogenerated chargesVSAvoidpixel dimensions
Core Design Contradiction:
Quantity of substanceVSArea of moving object

Solution Approach 1:

The storage capacitor is designed to serve multiple functions: it acts as a secondary storage node for overflow charges, provides charge redistribution capability during readout, and enables dynamic range extension without requiring additional photodiode area. This multi-functionality allows a single component to address multiple requirements, maintaining compact pixel dimensions while achieving enhanced charge storage capacity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Quantity of substance

If dual storage nodes are implemented to extend dynamic range, then storage capacity increases, but device complexity increases

Engineering Contradiction:
Improvestorage capacity of photogenerated chargesVSAvoidcircuit complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent merges the readout circuitry for both storage nodes into a shared amplifier and control logic structure. The same readout amplifier processes signals from both the first and second storage nodes, and a unified control mechanism manages the transfer and readout operations. This merging approach reduces the overall circuit complexity compared to implementing completely separate readout paths for each storage node.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for a higher dynamic range in image sensor pixels by effectively increasing the storage capacity of photogenerated charges, enabling the detection of a wider range of light intensities without modifying the photodiode's dimensions.

Implementation Method 1

The light received by the pixel causes the generation of electron-hole pairs in photodiode D, the electrons being stored in the photodiode

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS9923016B2High-dynamic-range pixel
Publication Date: 2018.03.20 STMICROELECTRONICS (CROLLES 2) SAS
  • US9923016B2 patent drawing
  • US9923016B2 patent drawing
  • US9923016B2 patent drawing

AI summary

A pixel including a photodiode having a first pole coupled through a transfer MOS transistor to a node for sensing charges of a first type stored in the photodiode, and having a second pole connected to a storage capacitor and to a circuit for reading charges of a second type sent to the storage capacitor.