High Frequency Attenuator Ground Section Design

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Solution Overview

Problem

Existing chip attenuators face impedance matching issues and signal reflections when attenuating high-frequency signals, particularly due to narrow ground strips and wrap-around contacts, which limit their frequency range and operational consistency above 18 GHz.

Innovation Solution

A substrate-based chip attenuator design with a large ground section and through-holes for electrical communication between sides, maintaining a G-S-G configuration and using thin-film layers for resistive sections in attenuator configurations like 'tee', 'pi', and 'dual pi' to reduce signal reflections and impedance mismatches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If wrap-around contacts are used to provide ground and signal communication, then the attenuator can be constructed with standard fabrication techniques, but impedance matching issues and signal reflections occur at high frequencies

Engineering Contradiction:
Improvefabrication technique compatibilityVSAvoidimpedance matching quality
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent extracts and eliminates the wrap-around contact structure from the design. Instead of using wrap-around contacts that cause impedance issues, the invention uses through-substrate vias that pass directly through the substrate to establish electrical connections, thereby removing the source of high-frequency signal reflections and impedance mismatches while maintaining fabrication compatibility

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a two-dimensional surface contact approach (wrap-around contacts on the surface) to a three-dimensional through-substrate approach (via holes penetrating the substrate). This dimensional change allows ground and signal paths to pass directly through the substrate thickness, maintaining G-S-G configuration integrity and eliminating the 90-degree angle transitions that cause reflections

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If a single ground trace in G-S configuration is used, then the attenuator structure is simplified, but signal reflections and losses increase at high frequencies

Engineering Contradiction:
Improvegrounding structure complexityVSAvoidsignal loss
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The patent segments the ground path into multiple separate ground traces rather than using a single ground trace. This segmentation allows for better impedance control and reduces signal reflections by providing multiple return paths for the signal, thereby reducing energy loss while maintaining relatively simple overall structure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different ground trace configurations in different local areas of the attenuator. Specifically, the ground traces are positioned to maintain proper G-S-G configuration at critical interfaces, with varying trace widths and spacing optimized for local impedance matching requirements, thereby reducing signal losses without uniformly increasing overall complexity

Inventive Principle:
Principle #3Local quality

3Area of stationary object

If narrow ground strips are used in the attenuator design, then the chip size is reduced, but impedance matching issues occur when attenuating high frequency signals

Engineering Contradiction:
Improvechip areaVSAvoidimpedance matching quality
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent changes the ground strip width parameter dynamically along the signal path. The ground strips are made wider at critical interfaces where impedance matching is most important (such as at the input and output contacts) and can be narrower in less critical areas. This parameter variation maintains proper impedance matching for high-frequency signals while minimizing the overall chip area

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10460992B2High frequency attenuator
Publication Date: 2019.10.29 THIN FILM TECHNOLOGY CORPORATION
  • US10460992B2 patent drawing
  • US10460992B2 patent drawing
  • US10460992B2 patent drawing

AI summary

High-frequency thin film chip attenuators can include a substrate having a first side and a second side, a first portion coupled to the first side of the substrate, and a second portion coupled to the second side of the substrate. The first portion can include a ground section, an input contact section, and an output contact section. The second portion can include a ground section, an input section, an output section, and a plurality of resistive sections providing electrical communication between the input section, the output section, and the ground section. The resistive sections can be arranged in an attenuation configuration to attenuate a signal received at the input section and output via the output section. A plurality of through-holes extending through the substrate can provide electrical communication between sections on the first side of the substrate and associated sections on the second side of the substrate.