High-Frequency High-Power Packaging Module Reducing Loop Inductance
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Solution Overview
Problem
Existing semiconductor packaging technologies struggle to simultaneously achieve high-frequency and high-power performance due to increased loop inductance and limited heat dissipation capabilities, which hinder the full utilization of third-generation semiconductor GaN/SiC advantages.
Innovation Solution
A high-frequency high-power packaging module is designed, comprising a power conversion bridge arm, high-frequency capacitor, circuit layer, insulating heat-conducting plate, and plastic package body. This module reduces loop inductance while maintaining heat dissipation capabilities through specific electrical and thermal connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to connect the front surface of the semiconductor power device, then electrical connection is achieved, but loop inductance is greatly increased and switching speed improvement is limited
Solution Approach 1:
The patent removes the wire bonding process from the electrical connection method. Instead of using wire bonds to connect the front surface electrodes to the ceramic substrate, the invention directly bonds the semiconductor power device to the circuit board through the back surface, eliminating the wire bonding step and thereby reducing loop inductance while maintaining electrical connection reliability
Solution Approach 2:
The patent inverts the conventional connection approach by connecting the back surface (electrode surface) of the semiconductor power device to the circuit board instead of connecting the front surface through wire bonding. This inversion of the connection method fundamentally reduces the current path length and loop inductance, enabling faster switching speeds
2Temperature
If thick copper ceramic substrate is used for heat dissipation, then heat dissipation capability is improved, but wiring precision is poor and small-spacing SMD operation cannot be achieved
Solution Approach 1:
The patent segments the heat dissipation function from the electrical connection function. The back surface of the semiconductor power device directly bonds to the circuit board for electrical connection, while a separate heat dissipation structure (heat dissipation plate or heat sink) is attached to the bottom surface of the circuit board. This segmentation allows thin substrates to be used for precise wiring while maintaining effective heat dissipation through dedicated thermal management components
Solution Approach 2:
The patent moves heat dissipation to another dimension by attaching heat dissipation structures to the bottom surface of the circuit board rather than using thick copper layers within the substrate. This vertical dimension approach to heat dissipation allows the circuit board to remain thin for precise wiring while still achieving effective thermal management through external heat dissipation structures
3Temperature
If back surface welding is used for heat dissipation, then heat dissipation is achieved, but loop inductance is increased due to bonding wire
Solution Approach 1:
The patent removes the bonding wire from the electrical connection path. Instead of welding the back surface and then using bonding wires to connect to the circuit board, the invention directly bonds the back surface electrodes to corresponding pads on the circuit board, eliminating the intermediate bonding wire step and thereby reducing loop inductance while maintaining heat dissipation capability
Solution Approach 2:
The patent merges the electrical connection function and the mechanical bonding function into a single direct bonding step. The back surface of the semiconductor power device is directly bonded to the circuit board, simultaneously achieving both electrical connection and mechanical support without requiring separate welding and wire bonding steps, thereby reducing loop inductance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces loop inductance, enabling high-frequency and high-power operations, and fully exploits the advantages of third-generation semiconductor GaN/SiC, thereby providing a basis for upgrading semiconductor performance.
Implementation Method 1
the back surface of the semiconductor power device is thermally connected with or electrically connected with the lower surface of the insulating heat-conducting plate
Data Source
Figure 1~2C
Figure 2D~2H
Figure 2I~3A
AI summary
Disclosed are a high-frequency high-power package module, a manufacturing method for a module, and a hybrid substrate. The high-frequency high-power package module comprises at least one power conversion bridge arm, at least one high-frequency capacitor, a circuit layer, an insulated thermally conductive plate, and a plastic package body , a front surface of a semiconductor power device is electrically connected to a first surface of the circuit layer; a back surface of the semiconductor power device is thermally connected to or electrically and thermally connected to a lower surface of the insulated thermally conductive plate; the high-frequency capacitor is electrically connected to the first surface of the circuit layer or a second surface of the circuit layer or the lower surface of the insulated thermally conductive plate; and at least one electrode of the high-frequency capacitor is electrically connected to at least one electrode of the at least one semiconductor power device by means of an inner-layer electrical connection layer. According to the present application, the loop inductance is greatly reduced while the heat dissipation capability is ensured, so that the high-power high frequency' is realized, advantages of a third-generation semiconductor are fully exerted, and an application basis is provided for upgrading of the performance of the third-generation semiconductor.