High-Frequency Module Ground Metal Part Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional high-frequency modules with three-dimensionally stacked semiconductor components face challenges in achieving low-loss, wideband performance due to contact failures and unstable ground potential, leading to degradation of high-frequency characteristics.
Innovation Solution
The design incorporates a ground metal part with higher electrical conductivity, such as copper, and a wider width than traditional ground via lines, connected directly to the semiconductor chip, reducing ground resistance and maintaining stable ground potential through a shorter and more stable ground connection path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor components are three-dimensionally stacked to reduce module size, then the volume of the high-frequency module is reduced, but contact failures occur and ground potential becomes unstable leading to degraded high-frequency characteristics
Solution Approach 1:
The invention transitions from planar ground connections to three-dimensional ground connections by introducing vertical ground via holes through the substrate. This allows ground potential to be established in the vertical dimension, stabilizing the ground reference for stacked semiconductor components while maintaining compact module volume.
Solution Approach 2:
The invention introduces an intermediary ground connection structure consisting of ground via holes filled with conductive material that penetrates through the substrate. This intermediary structure provides a stable ground reference between the stacked semiconductor components, preventing ground potential instability and contact failures.
2Device complexity
If conventional ground connections are used in stacked component configurations, then device complexity is reduced, but transmission loss increases and wideband low-loss performance cannot be achieved
Solution Approach 1:
The invention changes the parameters of the ground connection by filling via holes with highly conductive material and optimizing the via hole dimensions and distribution. This reduces ground resistance and inductance, thereby reducing transmission loss and enabling wideband low-loss performance despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in low-loss characteristics across a wide frequency range, with transmission losses under 0.2 dB up to 20 GHz and reflection below -20 dB, effectively preventing ground potential instability and enhancing high-frequency performance.
Implementation Method 1
The design incorporates a ground metal part with higher electrical conductivity, such as copper, and a wider width than traditional ground via lines, connected directly to the semiconductor chip, reducing ground resistance and maintaining stable ground potential
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member, a semiconductor device mounted on an upper face of the upper substrate, a first ground line connected to the semiconductor device and formed on the upper substrate, and a ground metal part connected to the base metal part and disposed in the lower base member, wherein the ground metal part is connected to the first ground line on the upper substrate.