High-Indium Oxide Transistor for High-Resolution Display Driving
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Solution Overview
Problem
High-resolution display devices face a challenge in maintaining a sufficient driving voltage range due to the increased number of pixels, which reduces the driving current and transistor performance, especially when using oxide thin film transistors.
Innovation Solution
Incorporating an oxide semiconductor active layer with a high amount of indium (In) in the driving transistor, exceeding 70 at %, and optimizing the transistor structure with specific indium-tin oxide or indium-tin-gallium oxide compositions, along with a higher oxygen concentration in certain regions, to enhance driving voltage range and operational characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of pixels is increased to achieve high resolution, then the resolution is improved, but the driving current of each pixel decreases
Solution Approach 1:
The patent changes the compositional parameters of the oxide semiconductor material by increasing the indium content to 70 at % or more. This parameter change improves the electrical characteristics of the transistor, enabling it to maintain sufficient driving current even when the pixel area and channel width are reduced for high-resolution displays.
2Measurement precision
If the pixel area is reduced to increase the number of pixels, then the resolution is improved, but the driving voltage range of the transistor is reduced
Solution Approach 1:
The patent modifies the material composition parameter by incorporating high-indium oxide semiconductor (70 at % In or more), which fundamentally changes the electrical characteristics of the transistor. This enables the transistor to maintain a wide driving voltage range even with a narrow channel region, thus preserving ease of manufacture and device performance in high-resolution displays.
3Area of moving object
If the channel length is reduced to decrease the transistor area, then the pixel area is reduced, but the transistor performance deteriorates
Solution Approach 1:
The patent changes the compositional parameter of the oxide semiconductor to contain 70 at % or more indium, which improves the mobility and electrical characteristics of the transistor. This allows the transistor to maintain high performance even with a reduced channel length, enabling smaller pixel areas without sacrificing reliability.
Solution Approach 2:
The patent uses a composite oxide semiconductor material containing indium, tin, and optionally gallium and zinc in specific ratios. This composite material structure provides superior electrical characteristics compared to conventional oxide semiconductors, enabling high-performance transistors in compact high-resolution display pixels.
Data Source
AI summary
A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, the first transistor includes a first active layer including an oxide semiconductor containing indium (In), and a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.