Backside Interconnect Decoupling Capacitors Using High-k Dielectrics
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, the integration density of electronic components increases, but this leads to new challenges such as instability in power supply lines and electrical ground lines, requiring effective decoupling capacitors to stabilize these components and optimize device performance.
Innovation Solution
The formation of decoupling capacitors using high-k dielectric materials in the interconnect structure on both the front and backside of semiconductor chips, particularly between power supply lines and electrical ground lines, to enhance charge storage capacity while minimizing size, thereby improving device density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional decoupling capacitors are used in semiconductor devices, then power supply stability is improved, but device area is increased
Solution Approach 1:
The patent changes the dielectric constant parameter by using high-k dielectric materials (k>7.0) instead of conventional dielectrics. This parameter change allows achieving the same capacitance value with a smaller physical area, thereby resolving the contradiction between power supply stability and device area.
Solution Approach 2:
The patent employs composite material structures combining high-k dielectric materials with conductive interconnect layers to form integrated decoupling capacitors. This composite approach enables high capacitance density within the interconnect structure, reducing the area required while maintaining power supply stability.
2Productivity
If feature size is reduced to increase integration density, then device density is improved, but power supply stability deteriorates
Solution Approach 1:
By changing the dielectric constant parameter to high-k materials, the patent achieves sufficient capacitance values even with reduced feature sizes. This allows integration density to increase while power supply stability is maintained through the enhanced charge storage capacity of high-k dielectrics.
3Ease of manufacture
If conventional dielectric materials are used in decoupling capacitors, then manufacturing simplicity is maintained, but charge storage capacity is limited
Solution Approach 1:
The patent changes the dielectric material parameter to high-k materials that can be deposited using standard semiconductor manufacturing techniques such as atomic layer deposition (ALD) or chemical vapor deposition (CVD). This maintains manufacturing simplicity while dramatically increasing charge storage capacity through the higher dielectric constant.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes power supply lines and electrical ground lines, increases device density by reducing the area required for decoupling capacitors, and allows for greater charge storage with minimized component size, leading to improved semiconductor device performance.
Implementation Method 1
the fourth dielectric layer 138B may be formed of the high-k dielectric materials 141... allowing for the decoupling capacitors 142 to hold greater charges, while minimizing the size of the decoupling capacitors 142
Data Source
AI summary
Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.