High-k Dielectric Layer Crystallization for Thin Capacitor Films
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Solution Overview
Problem
Conventional methods face challenges in forming high-quality thin film high-k dielectric layers with increased electrical charge storage capability, particularly in scaling semiconductor devices, where capacitor structures require enhanced performance without dimension reduction.
Innovation Solution
The method involves depositing a hafnium zirconium oxide layer and a capping layer using cyclical deposition processes, followed by thermal annealing to crystallize the layer, and subsequent removal of the capping layer to achieve a high-k dielectric layer with improved dielectric constant, suitable for capacitor structures in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition methods are used to form dielectric layers, then the manufacturing process is simple, but the dielectric constant and electrical charge storage capability are insufficient
Solution Approach 1:
The deposition process is divided into multiple cyclical deposition steps, where each cycle deposits a portion of the desired film thickness. This segmentation allows precise control over film composition and properties, achieving high dielectric constant values while maintaining manufacturing feasibility through repeated simple cycles.
Solution Approach 2:
The method employs periodic cyclical deposition processes where precursor gases are alternately introduced in specific sequences. This periodic action enables controlled formation of high-k dielectric layers with enhanced charge storage capability by repeating the deposition cycle multiple times with optimized gas pulsing sequences.
2Reliability
If film thickness is reduced to scale down capacitor structures, then device density increases, but electrical charge storage capability decreases
Solution Approach 1:
The invention changes the material composition parameters by controlling the ratios and sequences of precursor gases during cyclical deposition. This enables formation of thin films with exceptionally high dielectric constants, allowing reduced film thickness to be compensated by increased dielectric constant, thereby maintaining charge storage capability at smaller dimensions.
3Manufacturing precision
If high-k dielectric layers are formed with thin film thickness, then capacitor density increases, but manufacturing precision requirements increase
Solution Approach 1:
The total film thickness is achieved through multiple segmented deposition cycles rather than a single continuous deposition. Each cycle deposits a controlled thickness with precise stoichiometry, and the cumulative effect achieves the target thickness with superior precision while maintaining reasonable overall deposition rate through parallel processing capability.
Solution Approach 2:
The cyclical deposition process maintains continuous useful action by alternating precursor introduction without full chamber evacuation between cycles. This continuous process achieves high precision thickness control through self-limiting surface reactions in each cycle while maintaining high productivity through uninterrupted processing sequences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-k dielectric films with a dielectric constant greater than 7 at film thicknesses less than 4 nanometers, maintaining high electrical charge storage capability and superior quality, suitable for advanced semiconductor devices.
Implementation Method 1
depositing a hafnium zirconium oxide layer on the substrate by performing one or more deposition super-cycles of a first cyclical deposition process
Implementation Method 2
thermally annealing the hafnium zirconium oxide layer with the capping layer directly thereon, crystallizing at least a portion of the hafnium zirconium oxide layer thereby forming a hafnium zirconium oxide high-k dielectric layer
Implementation Method 3
thermally annealing the hafnium zirconium oxide layer with the capping layer directly thereon
Data Source
AI summary
Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include thermally annealing the dielectric layer with the capping layer directly thereon to form a high-k dielectric layer. Exemplary device structures are disclosure, such as metal-insulator-metal capacitor structures.